Effect of oxygen annealing on Pr0.7Ca0.3MnO 3 thin film for colossal electroresistance at room temperature

D. S. Kim; C. E. Lee; Y. H. Kim; Y. T. Kim

doi:10.1063/1.2364386

Effect of oxygen annealing on Pr_0.7Ca_0.3MnO ₃ thin film for colossal electroresistance at room temperature

D. S. Kim, C. E. Lee, Y. H. Kim, Y. T. Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We studied an appropriate annealing condition of Pr0.7 Ca0.3 Mn O3 (PCMO) thin film that can show good resistive switching characteristics for resistance random access memory applications and also tried to elucidate the mechanism of the resistive switching of PCMO thin film at room temperature. We could observe that crystal structure of PCMO film was changed by oxygen annealing. From x-ray photoelectron spectroscopy measurements, we can conclude that the excess of oxygen by oxygen annealing of PCMO film leads to an increase of Mn4+ content at the PCMO surface with a subsequent change in the Mn4+ Mn3+ ratio at the PCMO surface. The resistance ratio of high resistance state and low resistance state was increased by oxygen annealing of PCMO thin film. This can be explained as follows. The change of the Mn4+ Mn3+ ratio at the PCMO surface by oxygen annealing leads to the change of characteristics of Au-PCMO interface domain and therefore results in the change of the resistance ratio.

Original language	English
Article number	093901
Journal	Journal of Applied Physics
Volume	100
Issue number	9
DOIs	https://doi.org/10.1063/1.2364386
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Effect of oxygen annealing on Pr0.7Ca0.3MnO 3 thin film for colossal electroresistance at room temperature",

abstract = "We studied an appropriate annealing condition of Pr0.7 Ca0.3 Mn O3 (PCMO) thin film that can show good resistive switching characteristics for resistance random access memory applications and also tried to elucidate the mechanism of the resistive switching of PCMO thin film at room temperature. We could observe that crystal structure of PCMO film was changed by oxygen annealing. From x-ray photoelectron spectroscopy measurements, we can conclude that the excess of oxygen by oxygen annealing of PCMO film leads to an increase of Mn4+ content at the PCMO surface with a subsequent change in the Mn4+ Mn3+ ratio at the PCMO surface. The resistance ratio of high resistance state and low resistance state was increased by oxygen annealing of PCMO thin film. This can be explained as follows. The change of the Mn4+ Mn3+ ratio at the PCMO surface by oxygen annealing leads to the change of characteristics of Au-PCMO interface domain and therefore results in the change of the resistance ratio.",

author = "Kim, {D. S.} and Lee, {C. E.} and Kim, {Y. H.} and Kim, {Y. T.}",

note = "Funding Information: This research was supported by the National Research Program for the 0.1 Terabit Non-Volatile Memory Development sponsored by the Korean Ministry of Commerce, Industry and Energy.",

year = "2006",

doi = "10.1063/1.2364386",

language = "English",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

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T1 - Effect of oxygen annealing on Pr0.7Ca0.3MnO 3 thin film for colossal electroresistance at room temperature

AU - Kim, D. S.

AU - Lee, C. E.

AU - Kim, Y. H.

AU - Kim, Y. T.

N1 - Funding Information: This research was supported by the National Research Program for the 0.1 Terabit Non-Volatile Memory Development sponsored by the Korean Ministry of Commerce, Industry and Energy.

PY - 2006

Y1 - 2006

N2 - We studied an appropriate annealing condition of Pr0.7 Ca0.3 Mn O3 (PCMO) thin film that can show good resistive switching characteristics for resistance random access memory applications and also tried to elucidate the mechanism of the resistive switching of PCMO thin film at room temperature. We could observe that crystal structure of PCMO film was changed by oxygen annealing. From x-ray photoelectron spectroscopy measurements, we can conclude that the excess of oxygen by oxygen annealing of PCMO film leads to an increase of Mn4+ content at the PCMO surface with a subsequent change in the Mn4+ Mn3+ ratio at the PCMO surface. The resistance ratio of high resistance state and low resistance state was increased by oxygen annealing of PCMO thin film. This can be explained as follows. The change of the Mn4+ Mn3+ ratio at the PCMO surface by oxygen annealing leads to the change of characteristics of Au-PCMO interface domain and therefore results in the change of the resistance ratio.

AB - We studied an appropriate annealing condition of Pr0.7 Ca0.3 Mn O3 (PCMO) thin film that can show good resistive switching characteristics for resistance random access memory applications and also tried to elucidate the mechanism of the resistive switching of PCMO thin film at room temperature. We could observe that crystal structure of PCMO film was changed by oxygen annealing. From x-ray photoelectron spectroscopy measurements, we can conclude that the excess of oxygen by oxygen annealing of PCMO film leads to an increase of Mn4+ content at the PCMO surface with a subsequent change in the Mn4+ Mn3+ ratio at the PCMO surface. The resistance ratio of high resistance state and low resistance state was increased by oxygen annealing of PCMO thin film. This can be explained as follows. The change of the Mn4+ Mn3+ ratio at the PCMO surface by oxygen annealing leads to the change of characteristics of Au-PCMO interface domain and therefore results in the change of the resistance ratio.

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Effect of oxygen annealing on Pr_0.7Ca_0.3MnO ₃ thin film for colossal electroresistance at room temperature

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