Abstract
We studied an appropriate annealing condition of Pr0.7 Ca0.3 Mn O3 (PCMO) thin film that can show good resistive switching characteristics for resistance random access memory applications and also tried to elucidate the mechanism of the resistive switching of PCMO thin film at room temperature. We could observe that crystal structure of PCMO film was changed by oxygen annealing. From x-ray photoelectron spectroscopy measurements, we can conclude that the excess of oxygen by oxygen annealing of PCMO film leads to an increase of Mn4+ content at the PCMO surface with a subsequent change in the Mn4+ Mn3+ ratio at the PCMO surface. The resistance ratio of high resistance state and low resistance state was increased by oxygen annealing of PCMO thin film. This can be explained as follows. The change of the Mn4+ Mn3+ ratio at the PCMO surface by oxygen annealing leads to the change of characteristics of Au-PCMO interface domain and therefore results in the change of the resistance ratio.
| Original language | English |
|---|---|
| Article number | 093901 |
| Journal | Journal of Applied Physics |
| Volume | 100 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2006 |
Bibliographical note
Funding Information:This research was supported by the National Research Program for the 0.1 Terabit Non-Volatile Memory Development sponsored by the Korean Ministry of Commerce, Industry and Energy.
ASJC Scopus subject areas
- General Physics and Astronomy