Effect of oxygen annealing on Pr_0.7Ca_0.3MnO ₃ thin film for colossal electroresistance at room temperature

Keyphrases

• Room Temperature 100%
• Oxygen Effect 100%
• Oxygen Annealing 100%
• Colossal Electroresistance 100%
• Mn4+ 60%
• Resistive Switching 40%
• Resistance Ratio 40%
• Mn3+ 40%
• X-ray Photoelectron Spectroscopy 20%
• Spectroscopic Measurement 20%
• Annealing Conditions 20%
• High Resistance State 20%
• Resistive Random Access Memory (ReRAM) 20%
• Memory Application 20%
• Low Resistance State 20%

Engineering

• Thin Films 100%
• Room Temperature 100%
• Resistive 50%
• Resistance Ratio 50%
• Crystal Structure 25%
• Random Access Memory 25%
• Ray Photoelectron Spectroscopy 25%
• High Resistance State 25%

Material Science

• Thin Films 100%
• Annealing 100%
• Film 50%
• Crystal Structure 25%
• Photoemission Spectroscopy 25%