Effect of oxygen plasma-induced current blocking on the performance of GaN-based vertical light-emitting diodes

Sang Youl Lee, Kwang Ki Choi, Hwan Hee Jeong, Eun Joo Kim, June O. Song, Joon Woo Jeon, Tae Yeon Seong

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5 Citations (Scopus)

Abstract

We investigated the effect of O2 plasma-induced current blocking regions (O2 -CBRs) on the performance of GaN-based vertical light-emitting diodes (VLEDs) as a function of the O2 plasma rf power. The VLEDs fabricated with the O2 -CBRs give forward voltages in the range 3.41-3.48 V at 350 mA, which are slightly higher than those in the case of VLEDs with and without SiO2 current-blocking layers (CBLs). The output powers of VLEDs with O2 -CBRs for rf powers of 50 and 100 W are 400.2 and 399.4 mW, respectively, which are slightly higher than those of the VLEDs with SiO2 CBLs. Indium tin oxide (ITO)-based contacts to p-GaN show rectifying behaviors with Schottky barrier heights of 1.89 and 2.78 eV, when treated at rf powers of 50 and 100 W, respectively. X-ray photoemission spectroscopy (XPS) results show that for the samples treated at 50 W, the Ga 2p core level moves toward the higher binding-energy side as compared to that of the reference sample without plasma treatment. On the basis of the electrical characteristics and XPS results, we state that the O2-CBR effect is due to the generation of donor-like defects at the p-GaN surface.

Original languageEnglish
Article number041203
JournalJournal of Vacuum Science and Technology B
Volume29
Issue number4
DOIs
Publication statusPublished - 2011 Jul

Bibliographical note

Funding Information:
This research was supported by the LED Biz division of LG Innotek (LGIT) Co., Ltd. One (TYS) of the authors was supported by the World Class University program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (MEST) (Grant No. R33-2008-000-10025-0) and the Industrial Technology Development Program funded by the Ministry of Knowledge Economy (MKE), Korea.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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