Effect of oxygen pressure on the electrical properties of Bi5 Nb3O15 films grown by RF magnetron sputtering

Kyung Hoon Cho; Chang Hak Choi; Joo Young Choi; Tae Geun Seong; Sahn Nahm; Chong Yun Kang; Seok Jin Yoon; Jong Hee Kim

doi:10.1109/LED.2008.2001476

Effect of oxygen pressure on the electrical properties of Bi₅ Nb₃O₁₅ films grown by RF magnetron sputtering

Kyung Hoon Cho, Chang Hak Choi, Joo Young Choi, Tae Geun Seong, Sahn Nahm, Chong Yun Kang, Seok Jin Yoon, Jong Hee Kim

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Bi₅Nb₃O₁₅ (B₅N₃ films grown under a low oxygen partial pressure (OP) of 1.7 mtorr showed a high leakage current density of 0.1 A/cm² at 1.0 MV/cm. However, the leakage current density decreased with increasing OP to a minimum of 5.8 × 10⁹ A/cm² for the film grown under 5.1 mtorr due to the decreased number of oxygen vacancies. This film also showed an improved breakdown field of 2.2 MV/cm and a large capacitance density of 24.9 fF/μm². The electrical properties of the film, however, deteriorated with a further increase in OP, which is probably due to the formation of oxygen interstitial ions. Therefore, superior electrical properties for the B₅ N₃ film can be obtained by careful control of OP.

Original language	English
Pages (from-to)	984-987
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	29
Issue number	9
DOIs	https://doi.org/10.1109/LED.2008.2001476
Publication status	Published - 2008

Keywords

Bi NbO (BN
High dielectric constant
Leakage current density
Metal-insulator-metal (MIM) capacitor
Temperature coefficient of capacitance (TCC)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2008.2001476

Cite this

@article{a10a98406ad04de3a2281c9f4e5ea03b,

title = "Effect of oxygen pressure on the electrical properties of Bi5 Nb3O15 films grown by RF magnetron sputtering",

abstract = "Bi5Nb3O15 (B5N3 films grown under a low oxygen partial pressure (OP) of 1.7 mtorr showed a high leakage current density of 0.1 A/cm2 at 1.0 MV/cm. However, the leakage current density decreased with increasing OP to a minimum of 5.8 × 109 A/cm2 for the film grown under 5.1 mtorr due to the decreased number of oxygen vacancies. This film also showed an improved breakdown field of 2.2 MV/cm and a large capacitance density of 24.9 fF/μm2. The electrical properties of the film, however, deteriorated with a further increase in OP, which is probably due to the formation of oxygen interstitial ions. Therefore, superior electrical properties for the B5 N3 film can be obtained by careful control of OP.",

keywords = "Bi NbO (BN, High dielectric constant, Leakage current density, Metal-insulator-metal (MIM) capacitor, Temperature coefficient of capacitance (TCC)",

author = "Cho, {Kyung Hoon} and Choi, {Chang Hak} and Choi, {Joo Young} and Seong, {Tae Geun} and Sahn Nahm and Kang, {Chong Yun} and Yoon, {Seok Jin} and Kim, {Jong Hee}",

note = "Funding Information: Manuscript received April 18, 2008; revised June 3, 2008. This work was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, Republic of Korea. The review of this letter was arranged by Editor C.-P. Chang. K.-H. Cho, C.-H. Choi, J.-Y. Choi, T.-G. Seong, and S. Nahm are with the Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea (e-mail: snahm@korea.ac.kr). C.-Y. Kang and S.-J. Yoon are with the Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea. J.-H. Kim is with the Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2008.2001476",

year = "2008",

doi = "10.1109/LED.2008.2001476",

language = "English",

volume = "29",

pages = "984--987",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Effect of oxygen pressure on the electrical properties of Bi5 Nb3O15 films grown by RF magnetron sputtering

AU - Cho, Kyung Hoon

AU - Choi, Chang Hak

AU - Choi, Joo Young

AU - Seong, Tae Geun

AU - Nahm, Sahn

AU - Kang, Chong Yun

AU - Yoon, Seok Jin

AU - Kim, Jong Hee

N1 - Funding Information: Manuscript received April 18, 2008; revised June 3, 2008. This work was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, Republic of Korea. The review of this letter was arranged by Editor C.-P. Chang. K.-H. Cho, C.-H. Choi, J.-Y. Choi, T.-G. Seong, and S. Nahm are with the Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea (e-mail: snahm@korea.ac.kr). C.-Y. Kang and S.-J. Yoon are with the Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea. J.-H. Kim is with the Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2008.2001476

PY - 2008

Y1 - 2008

N2 - Bi5Nb3O15 (B5N3 films grown under a low oxygen partial pressure (OP) of 1.7 mtorr showed a high leakage current density of 0.1 A/cm2 at 1.0 MV/cm. However, the leakage current density decreased with increasing OP to a minimum of 5.8 × 109 A/cm2 for the film grown under 5.1 mtorr due to the decreased number of oxygen vacancies. This film also showed an improved breakdown field of 2.2 MV/cm and a large capacitance density of 24.9 fF/μm2. The electrical properties of the film, however, deteriorated with a further increase in OP, which is probably due to the formation of oxygen interstitial ions. Therefore, superior electrical properties for the B5 N3 film can be obtained by careful control of OP.

AB - Bi5Nb3O15 (B5N3 films grown under a low oxygen partial pressure (OP) of 1.7 mtorr showed a high leakage current density of 0.1 A/cm2 at 1.0 MV/cm. However, the leakage current density decreased with increasing OP to a minimum of 5.8 × 109 A/cm2 for the film grown under 5.1 mtorr due to the decreased number of oxygen vacancies. This film also showed an improved breakdown field of 2.2 MV/cm and a large capacitance density of 24.9 fF/μm2. The electrical properties of the film, however, deteriorated with a further increase in OP, which is probably due to the formation of oxygen interstitial ions. Therefore, superior electrical properties for the B5 N3 film can be obtained by careful control of OP.

KW - Bi NbO (BN

KW - High dielectric constant

KW - Leakage current density

KW - Metal-insulator-metal (MIM) capacitor

KW - Temperature coefficient of capacitance (TCC)

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U2 - 10.1109/LED.2008.2001476

DO - 10.1109/LED.2008.2001476

M3 - Article

AN - SCOPUS:50649102398

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EP - 987

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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