Effect of oxygen vacancies on the electrical properties of Bi 6Ti5TeO22 thin film

Chang Hak Choi; Joo Young Choi; Kyung Hoon Cho; Myong Jae Yoo; Sahn Nahm; Chong Yun Kang; Seok Jin Yoon; Jong Hee Kim

doi:10.1149/1.2976795

Effect of oxygen vacancies on the electrical properties of Bi ₆Ti₅TeO₂₂ thin film

Chang Hak Choi, Joo Young Choi, Kyung Hoon Cho, Myong Jae Yoo, Sahn Nahm, Chong Yun Kang, Seok Jin Yoon, Jong Hee Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Bi₆Ti₅TeO₂₂ film grown under a low oxygen pressure (OP) of 0.21 Pa showed a low breakdown field of 0.25 MVcm which increased with increasing the OP to 0.60 MVcm for the film grown under the OP of 0.59 Pa. The breakdown field decreased when the OP exceeded 0.59 Pa, due to the formation of oxygen interstitial ions. A small amount of Mn doping also increased the breakdown field of the Bi₆Ti₅TeO ₂₂ films grown under a low OP. These improvements were related to the decreased number of intrinsic oxygen vacancies identified by the variation of metallic telluride states in the photoemission spectra of the Te 3d level.

Original language	English
Pages (from-to)	G51-G54
Journal	Electrochemical and Solid-State Letters
Volume	11
Issue number	11
DOIs	https://doi.org/10.1149/1.2976795
Publication status	Published - 2008

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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@article{a233311dbc6f4166b6a4564ed467ee5e,

title = "Effect of oxygen vacancies on the electrical properties of Bi 6Ti5TeO22 thin film",

abstract = "Bi6Ti5TeO22 film grown under a low oxygen pressure (OP) of 0.21 Pa showed a low breakdown field of 0.25 MVcm which increased with increasing the OP to 0.60 MVcm for the film grown under the OP of 0.59 Pa. The breakdown field decreased when the OP exceeded 0.59 Pa, due to the formation of oxygen interstitial ions. A small amount of Mn doping also increased the breakdown field of the Bi6Ti5TeO 22 films grown under a low OP. These improvements were related to the decreased number of intrinsic oxygen vacancies identified by the variation of metallic telluride states in the photoemission spectra of the Te 3d level.",

author = "Choi, {Chang Hak} and Choi, {Joo Young} and Cho, {Kyung Hoon} and Yoo, {Myong Jae} and Sahn Nahm and Kang, {Chong Yun} and Yoon, {Seok Jin} and Kim, {Jong Hee}",

year = "2008",

doi = "10.1149/1.2976795",

language = "English",

volume = "11",

pages = "G51--G54",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "11",

}

TY - JOUR

T1 - Effect of oxygen vacancies on the electrical properties of Bi 6Ti5TeO22 thin film

AU - Choi, Chang Hak

AU - Choi, Joo Young

AU - Cho, Kyung Hoon

AU - Yoo, Myong Jae

AU - Nahm, Sahn

AU - Kang, Chong Yun

AU - Yoon, Seok Jin

AU - Kim, Jong Hee

PY - 2008

Y1 - 2008

N2 - Bi6Ti5TeO22 film grown under a low oxygen pressure (OP) of 0.21 Pa showed a low breakdown field of 0.25 MVcm which increased with increasing the OP to 0.60 MVcm for the film grown under the OP of 0.59 Pa. The breakdown field decreased when the OP exceeded 0.59 Pa, due to the formation of oxygen interstitial ions. A small amount of Mn doping also increased the breakdown field of the Bi6Ti5TeO 22 films grown under a low OP. These improvements were related to the decreased number of intrinsic oxygen vacancies identified by the variation of metallic telluride states in the photoemission spectra of the Te 3d level.

AB - Bi6Ti5TeO22 film grown under a low oxygen pressure (OP) of 0.21 Pa showed a low breakdown field of 0.25 MVcm which increased with increasing the OP to 0.60 MVcm for the film grown under the OP of 0.59 Pa. The breakdown field decreased when the OP exceeded 0.59 Pa, due to the formation of oxygen interstitial ions. A small amount of Mn doping also increased the breakdown field of the Bi6Ti5TeO 22 films grown under a low OP. These improvements were related to the decreased number of intrinsic oxygen vacancies identified by the variation of metallic telluride states in the photoemission spectra of the Te 3d level.

UR - http://www.scopus.com/inward/record.url?scp=51849131665&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51849131665&partnerID=8YFLogxK

U2 - 10.1149/1.2976795

DO - 10.1149/1.2976795

M3 - Article

AN - SCOPUS:51849131665

SN - 1099-0062

VL - 11

SP - G51-G54

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 11

ER -

Effect of oxygen vacancies on the electrical properties of Bi ₆Ti₅TeO₂₂ thin film

Abstract

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