Effect of oxygen vacancy and Mn-doping on electrical properties of Bi4Ti3O12 thin film grown by pulsed laser deposition

Joo Young Choi; Chang Hak Choi; Kyung Hoon Cho; Tae Geun Seong; Sahn Nahm; Chong Yun Kang; Seok Jin Yoon; Jong Hee Kim

doi:10.1016/j.actamat.2009.01.038

Effect of oxygen vacancy and Mn-doping on electrical properties of Bi₄Ti₃O₁₂ thin film grown by pulsed laser deposition

Joo Young Choi, Chang Hak Choi, Kyung Hoon Cho, Tae Geun Seong, Sahn Nahm, Chong Yun Kang, Seok Jin Yoon, Jong Hee Kim

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

An amorphous Bi₄Ti₃O₁₂ phase was formed when films were grown at <400 °C while Bi₂Ti₂O₇ and Bi₂Ti₄O₁₁ transient phases were developed when films were grown at 400-500 and 600 °C, respectively. A homogeneous Bi₄Ti₃O₁₂ crystalline phase was formed in the film grown at 700 °C. The high leakage current density (5 × 10^-7 A cm^-2 at 0.2 MV cm^-1) of the film grown at 300 °C under 100 mTorr oxygen partial pressure (OPP) decreased to 2 × 10^-8 A cm^-2 for the film grown at 200 mTorr OPP, due to the decreased number of intrinsic oxygen vacancies. However, when OPP exceeded 200 mTorr, the electrical properties were deteriorated due to the formation of oxygen interstitial ions. Mn-doping at a suitable level improved the electrical properties of the films by producing extrinsic oxygen vacancies that reduced the number of intrinsic oxygen vacancies. Schottky emission was suggested as the leakage current mechanism of the Bi₄Ti₃O₁₂ film.

Original language	English
Pages (from-to)	2454-2460
Number of pages	7
Journal	Acta Materialia
Volume	57
Issue number	8
DOIs	https://doi.org/10.1016/j.actamat.2009.01.038
Publication status	Published - 2009 May

Keywords

Dielectrics
Laser deposition
Thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Polymers and Plastics
Metals and Alloys

Access to Document

10.1016/j.actamat.2009.01.038

Cite this

@article{8341d60f3e4a4b3d8d1964c2c9d0908a,

title = "Effect of oxygen vacancy and Mn-doping on electrical properties of Bi4Ti3O12 thin film grown by pulsed laser deposition",

abstract = "An amorphous Bi4Ti3O12 phase was formed when films were grown at <400 °C while Bi2Ti2O7 and Bi2Ti4O11 transient phases were developed when films were grown at 400-500 and 600 °C, respectively. A homogeneous Bi4Ti3O12 crystalline phase was formed in the film grown at 700 °C. The high leakage current density (5 × 10-7 A cm-2 at 0.2 MV cm-1) of the film grown at 300 °C under 100 mTorr oxygen partial pressure (OPP) decreased to 2 × 10-8 A cm-2 for the film grown at 200 mTorr OPP, due to the decreased number of intrinsic oxygen vacancies. However, when OPP exceeded 200 mTorr, the electrical properties were deteriorated due to the formation of oxygen interstitial ions. Mn-doping at a suitable level improved the electrical properties of the films by producing extrinsic oxygen vacancies that reduced the number of intrinsic oxygen vacancies. Schottky emission was suggested as the leakage current mechanism of the Bi4Ti3O12 film.",

keywords = "Dielectrics, Laser deposition, Thin films",

author = "Choi, {Joo Young} and Choi, {Chang Hak} and Cho, {Kyung Hoon} and Seong, {Tae Geun} and Sahn Nahm and Kang, {Chong Yun} and Yoon, {Seok Jin} and Kim, {Jong Hee}",

note = "Funding Information: This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, Republic of Korea.",

year = "2009",

month = may,

doi = "10.1016/j.actamat.2009.01.038",

language = "English",

volume = "57",

pages = "2454--2460",

journal = "Acta Materialia",

issn = "1359-6454",

publisher = "Elsevier Limited",

number = "8",

}

TY - JOUR

T1 - Effect of oxygen vacancy and Mn-doping on electrical properties of Bi4Ti3O12 thin film grown by pulsed laser deposition

AU - Choi, Joo Young

AU - Choi, Chang Hak

AU - Cho, Kyung Hoon

AU - Seong, Tae Geun

AU - Nahm, Sahn

AU - Kang, Chong Yun

AU - Yoon, Seok Jin

AU - Kim, Jong Hee

N1 - Funding Information: This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, Republic of Korea.

PY - 2009/5

Y1 - 2009/5

N2 - An amorphous Bi4Ti3O12 phase was formed when films were grown at <400 °C while Bi2Ti2O7 and Bi2Ti4O11 transient phases were developed when films were grown at 400-500 and 600 °C, respectively. A homogeneous Bi4Ti3O12 crystalline phase was formed in the film grown at 700 °C. The high leakage current density (5 × 10-7 A cm-2 at 0.2 MV cm-1) of the film grown at 300 °C under 100 mTorr oxygen partial pressure (OPP) decreased to 2 × 10-8 A cm-2 for the film grown at 200 mTorr OPP, due to the decreased number of intrinsic oxygen vacancies. However, when OPP exceeded 200 mTorr, the electrical properties were deteriorated due to the formation of oxygen interstitial ions. Mn-doping at a suitable level improved the electrical properties of the films by producing extrinsic oxygen vacancies that reduced the number of intrinsic oxygen vacancies. Schottky emission was suggested as the leakage current mechanism of the Bi4Ti3O12 film.

AB - An amorphous Bi4Ti3O12 phase was formed when films were grown at <400 °C while Bi2Ti2O7 and Bi2Ti4O11 transient phases were developed when films were grown at 400-500 and 600 °C, respectively. A homogeneous Bi4Ti3O12 crystalline phase was formed in the film grown at 700 °C. The high leakage current density (5 × 10-7 A cm-2 at 0.2 MV cm-1) of the film grown at 300 °C under 100 mTorr oxygen partial pressure (OPP) decreased to 2 × 10-8 A cm-2 for the film grown at 200 mTorr OPP, due to the decreased number of intrinsic oxygen vacancies. However, when OPP exceeded 200 mTorr, the electrical properties were deteriorated due to the formation of oxygen interstitial ions. Mn-doping at a suitable level improved the electrical properties of the films by producing extrinsic oxygen vacancies that reduced the number of intrinsic oxygen vacancies. Schottky emission was suggested as the leakage current mechanism of the Bi4Ti3O12 film.

KW - Dielectrics

KW - Laser deposition

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=63749085298&partnerID=8YFLogxK

U2 - 10.1016/j.actamat.2009.01.038

DO - 10.1016/j.actamat.2009.01.038

M3 - Article

AN - SCOPUS:63749085298

SN - 1359-6454

VL - 57

SP - 2454

EP - 2460

JO - Acta Materialia

JF - Acta Materialia

IS - 8

ER -