Effect of oxygen vacancy on the conduction modulation linearity and classification accuracy of pr0.7ca0.3mno3 memristor

Yeon Pyo, Jong Un Woo, Hyun Gyu Hwang, Sahn Nahm, Jichai Jeong

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


An amorphous Pr0.7Ca0.3MnO3 (PCMO) film was grown on a TiN/SiO2/Si (TiN–Si) substrate at 300 °C and at an oxygen pressure (OP) of 100 mTorr. This PCMO memristor showed typ-ical bipolar switching characteristics, which were attributed to the generation and disruption of oxygen vacancy (OV) filaments. Fabrication of the PCMO memristor at a high OP resulted in non-linear conduction modulation with the application of equivalent pulses. However, the memristor fabricated at a low OP of 100 mTorr exhibited linear conduction modulation. The linearity of this memristor improved because the growth and disruption of the OV filaments were mostly deter-mined by the redox reaction of OV owing to the presence of numerous OVs in this PCMO film. Furthermore, simulation using a convolutional neural network revealed that this PCMO memristor has enhanced classification performance owing to its linear conduction modulation. This memris-tor also exhibited several biological synaptic characteristics, indicating that an amorphous PCMO thin film fabricated at a low OP would be a suitable candidate for artificial synapses.

Original languageEnglish
Article number2684
Issue number10
Publication statusPublished - 2021 Oct

Bibliographical note

Funding Information:
This work was supported in part by an Institute of Information & Communications Technology Planning & Evaluation (IITP) grant funded by the Korea government (MSIT) (No. 2017-0-00451) and a National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2020R1A2B5B01002063). We thank the KU-KIST graduate school program of Korea University.

Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.


  • Convolutional neural network
  • Memristor
  • Pr0.7Ca0.3MnO3
  • Resistive switching memory

ASJC Scopus subject areas

  • General Chemical Engineering
  • General Materials Science


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