An amorphous Pr0.7Ca0.3MnO3 (PCMO) film was grown on a TiN/SiO2/Si (TiN–Si) substrate at 300 °C and at an oxygen pressure (OP) of 100 mTorr. This PCMO memristor showed typ-ical bipolar switching characteristics, which were attributed to the generation and disruption of oxygen vacancy (OV) filaments. Fabrication of the PCMO memristor at a high OP resulted in non-linear conduction modulation with the application of equivalent pulses. However, the memristor fabricated at a low OP of 100 mTorr exhibited linear conduction modulation. The linearity of this memristor improved because the growth and disruption of the OV filaments were mostly deter-mined by the redox reaction of OV owing to the presence of numerous OVs in this PCMO film. Furthermore, simulation using a convolutional neural network revealed that this PCMO memristor has enhanced classification performance owing to its linear conduction modulation. This memris-tor also exhibited several biological synaptic characteristics, indicating that an amorphous PCMO thin film fabricated at a low OP would be a suitable candidate for artificial synapses.
Bibliographical noteFunding Information:
This work was supported in part by an Institute of Information & Communications Technology Planning & Evaluation (IITP) grant funded by the Korea government (MSIT) (No. 2017-0-00451) and a National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2020R1A2B5B01002063). We thank the KU-KIST graduate school program of Korea University.
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.
- Convolutional neural network
- Resistive switching memory
ASJC Scopus subject areas
- General Chemical Engineering
- General Materials Science