Effect of physical densification on sub-gap density of states in amorphous InGaZnO thin films

Hyungon Oh; Kyoungah Cho; Sangsig Kim

doi:10.1016/j.spmi.2018.07.021

Effect of physical densification on sub-gap density of states in amorphous InGaZnO thin films

Hyungon Oh, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this study, we investigate the relationship between the physical densification and sub-gap density-of-states (DOS) distribution of a-IGZO films prepared under various deposition pressures. For TFTs with a-IGZO channel films, the field effect mobility increases from 10.9 to 24.8 cm²/V·s, and the on-current increases from 1.5 to 20.8 μA as the deposition pressure for the channel films decreases from 7 to 1 mTorr. The sub-gap DOS distributions obtained from the electrical characteristics indicate the changes in the density of accepter-like tail states with deposition pressure. Further, the physical densification of the channel films increases as the deposition pressure decreases. Our study demonstrates that the lower density of accepter-like tail states and the higher physical densification contribute to the improved performance of a-IGZO TFTs.

Original language	English
Pages (from-to)	33-37
Number of pages	5
Journal	Superlattices and Microstructures
Volume	121
DOIs	https://doi.org/10.1016/j.spmi.2018.07.021
Publication status	Published - 2018 Sept

Bibliographical note

Funding Information:
This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (No. NRF-2015R1D1A1A01057641 ), by Samsung Display Co. Ltd. , by the Brain Korea 21 Plus Project in 2018 , and by the Korea University Grant .

Publisher Copyright:
© 2018 Elsevier Ltd

Keywords

Density of states
Deposition pressure
Film density
a-IGZO TFT

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2018.07.021

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title = "Effect of physical densification on sub-gap density of states in amorphous InGaZnO thin films",

abstract = "In this study, we investigate the relationship between the physical densification and sub-gap density-of-states (DOS) distribution of a-IGZO films prepared under various deposition pressures. For TFTs with a-IGZO channel films, the field effect mobility increases from 10.9 to 24.8 cm2/V·s, and the on-current increases from 1.5 to 20.8 μA as the deposition pressure for the channel films decreases from 7 to 1 mTorr. The sub-gap DOS distributions obtained from the electrical characteristics indicate the changes in the density of accepter-like tail states with deposition pressure. Further, the physical densification of the channel films increases as the deposition pressure decreases. Our study demonstrates that the lower density of accepter-like tail states and the higher physical densification contribute to the improved performance of a-IGZO TFTs.",

keywords = "Density of states, Deposition pressure, Film density, a-IGZO TFT",

author = "Hyungon Oh and Kyoungah Cho and Sangsig Kim",

note = "Funding Information: This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (No. NRF-2015R1D1A1A01057641 ), by Samsung Display Co. Ltd. , by the Brain Korea 21 Plus Project in 2018 , and by the Korea University Grant . Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

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AU - Oh, Hyungon

AU - Cho, Kyoungah

AU - Kim, Sangsig

N1 - Funding Information: This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (No. NRF-2015R1D1A1A01057641 ), by Samsung Display Co. Ltd. , by the Brain Korea 21 Plus Project in 2018 , and by the Korea University Grant . Publisher Copyright: © 2018 Elsevier Ltd

PY - 2018/9

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N2 - In this study, we investigate the relationship between the physical densification and sub-gap density-of-states (DOS) distribution of a-IGZO films prepared under various deposition pressures. For TFTs with a-IGZO channel films, the field effect mobility increases from 10.9 to 24.8 cm2/V·s, and the on-current increases from 1.5 to 20.8 μA as the deposition pressure for the channel films decreases from 7 to 1 mTorr. The sub-gap DOS distributions obtained from the electrical characteristics indicate the changes in the density of accepter-like tail states with deposition pressure. Further, the physical densification of the channel films increases as the deposition pressure decreases. Our study demonstrates that the lower density of accepter-like tail states and the higher physical densification contribute to the improved performance of a-IGZO TFTs.

AB - In this study, we investigate the relationship between the physical densification and sub-gap density-of-states (DOS) distribution of a-IGZO films prepared under various deposition pressures. For TFTs with a-IGZO channel films, the field effect mobility increases from 10.9 to 24.8 cm2/V·s, and the on-current increases from 1.5 to 20.8 μA as the deposition pressure for the channel films decreases from 7 to 1 mTorr. The sub-gap DOS distributions obtained from the electrical characteristics indicate the changes in the density of accepter-like tail states with deposition pressure. Further, the physical densification of the channel films increases as the deposition pressure decreases. Our study demonstrates that the lower density of accepter-like tail states and the higher physical densification contribute to the improved performance of a-IGZO TFTs.

KW - Density of states

KW - Deposition pressure

KW - Film density

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Effect of physical densification on sub-gap density of states in amorphous InGaZnO thin films

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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