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Effect of proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors
Y. Y. Xi, Y. H. Hwang, Y. L. Hsieh, S. Li, F. Ren, S. J. Pearton, E. Patrick, M. E. Law, G. Yang, H. Y. Kim, J. Kim, A. G. Baca, A. A. Allerman, C. Sanchez
Research output: Contribution to journal › Conference article › peer-review
2
Citations
(Scopus)