Effect of proton irradiation on electrical properties of CuInSe2 thin films

Hae Seok Lee; Hiroshi Okada; Akihiro Wakahara; Akira Yoshida; Takeshi Ohshima; Hisayoshi Itoh; Shirou Kawakita; Mitsuru Imaizumi; Sumio Matsuda

doi:10.1016/S0927-0248(02)00100-9

Effect of proton irradiation on electrical properties of CuInSe₂ thin films

Hae Seok Lee, Hiroshi Okada, Akihiro Wakahara, Akira Yoshida, Takeshi Ohshima, Hisayoshi Itoh, Shirou Kawakita, Mitsuru Imaizumi, Sumio Matsuda

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

High-energy proton irradiation (380 keV and 1 MeV) on the electrical properties of CuInSe₂ (CIS) thin films has been investigated. The samples were epitaxially grown on GaAs (001) substrates by Radio Frequency sputtering. As the proton fluence exceeded 1 × 10¹³ cm^-2, the carrier concentration and mobility of the CIS thin films were decreased. The carrier removal rate with proton fluence was estimated to be about 1000 cm^-1. The electrical properties of CIS thin films before and after irradiation were studied between 80 and 300K. From the temperature dependence of the carrier concentration in CIS thin films, we found N_D = 9.5 × 10¹⁶ cm^-3, N_A = 3.7 × 10¹⁶ cm^-3 and E_D= 21 meV from the fitting to the experimental data on the basis of the charge balance equation. After irradiation, a defect level was created, and N_T = 1 × 10¹⁷ cm^-3 for a fluence of 3 × 10¹³ cm^-2, N_T = 5.7 × 10¹⁷ cm^-3 for a fluence of 1 × 10¹⁴ cm^-2 and E_T = 95 meV were also obtained from the same fitting. The new defect, which acted as an electron trap, was due to proton irradiation, and the defect density was increased with proton fluence.

Original language	English
Pages (from-to)	57-63
Number of pages	7
Journal	Solar Energy Materials and Solar Cells
Volume	75
Issue number	1-2
DOIs	https://doi.org/10.1016/S0927-0248(02)00100-9
Publication status	Published - 2003 Jan
Externally published	Yes

Keywords

Carrier removal rate
CuInSe (CIS)
Irradiation-induced defect
Proton irradiation
Solar cell

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/S0927-0248(02)00100-9

Cite this

@article{7eeeefbf787b402186dd0610d7349b0b,

title = "Effect of proton irradiation on electrical properties of CuInSe2 thin films",

abstract = "High-energy proton irradiation (380 keV and 1 MeV) on the electrical properties of CuInSe2 (CIS) thin films has been investigated. The samples were epitaxially grown on GaAs (001) substrates by Radio Frequency sputtering. As the proton fluence exceeded 1 × 1013 cm-2, the carrier concentration and mobility of the CIS thin films were decreased. The carrier removal rate with proton fluence was estimated to be about 1000 cm-1. The electrical properties of CIS thin films before and after irradiation were studied between 80 and 300K. From the temperature dependence of the carrier concentration in CIS thin films, we found ND = 9.5 × 1016 cm-3, NA = 3.7 × 1016 cm-3 and ED= 21 meV from the fitting to the experimental data on the basis of the charge balance equation. After irradiation, a defect level was created, and NT = 1 × 1017 cm-3 for a fluence of 3 × 1013 cm-2, NT = 5.7 × 1017 cm-3 for a fluence of 1 × 1014 cm-2 and ET = 95 meV were also obtained from the same fitting. The new defect, which acted as an electron trap, was due to proton irradiation, and the defect density was increased with proton fluence.",

keywords = "Carrier removal rate, CuInSe (CIS), Irradiation-induced defect, Proton irradiation, Solar cell",

author = "Lee, {Hae Seok} and Hiroshi Okada and Akihiro Wakahara and Akira Yoshida and Takeshi Ohshima and Hisayoshi Itoh and Shirou Kawakita and Mitsuru Imaizumi and Sumio Matsuda",

year = "2003",

month = jan,

doi = "10.1016/S0927-0248(02)00100-9",

language = "English",

volume = "75",

pages = "57--63",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Effect of proton irradiation on electrical properties of CuInSe2 thin films

AU - Lee, Hae Seok

AU - Okada, Hiroshi

AU - Wakahara, Akihiro

AU - Yoshida, Akira

AU - Ohshima, Takeshi

AU - Itoh, Hisayoshi

AU - Kawakita, Shirou

AU - Imaizumi, Mitsuru

AU - Matsuda, Sumio

PY - 2003/1

Y1 - 2003/1

N2 - High-energy proton irradiation (380 keV and 1 MeV) on the electrical properties of CuInSe2 (CIS) thin films has been investigated. The samples were epitaxially grown on GaAs (001) substrates by Radio Frequency sputtering. As the proton fluence exceeded 1 × 1013 cm-2, the carrier concentration and mobility of the CIS thin films were decreased. The carrier removal rate with proton fluence was estimated to be about 1000 cm-1. The electrical properties of CIS thin films before and after irradiation were studied between 80 and 300K. From the temperature dependence of the carrier concentration in CIS thin films, we found ND = 9.5 × 1016 cm-3, NA = 3.7 × 1016 cm-3 and ED= 21 meV from the fitting to the experimental data on the basis of the charge balance equation. After irradiation, a defect level was created, and NT = 1 × 1017 cm-3 for a fluence of 3 × 1013 cm-2, NT = 5.7 × 1017 cm-3 for a fluence of 1 × 1014 cm-2 and ET = 95 meV were also obtained from the same fitting. The new defect, which acted as an electron trap, was due to proton irradiation, and the defect density was increased with proton fluence.

AB - High-energy proton irradiation (380 keV and 1 MeV) on the electrical properties of CuInSe2 (CIS) thin films has been investigated. The samples were epitaxially grown on GaAs (001) substrates by Radio Frequency sputtering. As the proton fluence exceeded 1 × 1013 cm-2, the carrier concentration and mobility of the CIS thin films were decreased. The carrier removal rate with proton fluence was estimated to be about 1000 cm-1. The electrical properties of CIS thin films before and after irradiation were studied between 80 and 300K. From the temperature dependence of the carrier concentration in CIS thin films, we found ND = 9.5 × 1016 cm-3, NA = 3.7 × 1016 cm-3 and ED= 21 meV from the fitting to the experimental data on the basis of the charge balance equation. After irradiation, a defect level was created, and NT = 1 × 1017 cm-3 for a fluence of 3 × 1013 cm-2, NT = 5.7 × 1017 cm-3 for a fluence of 1 × 1014 cm-2 and ET = 95 meV were also obtained from the same fitting. The new defect, which acted as an electron trap, was due to proton irradiation, and the defect density was increased with proton fluence.

KW - Carrier removal rate

KW - CuInSe (CIS)

KW - Irradiation-induced defect

KW - Proton irradiation

KW - Solar cell

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