Abstract
We have fabricated and characterized the uncooled light emitting device having a pseudomorphic structure of multiple quantum wells. The effect of numbers of compressively strained quantum well layers on the semiconductor diode laser characteristics was experimentally demonstrated, depending on room and high temperatures. In addition to the automatically embedded absorptive grating which can reduce the epitaxial growth step, the laser performance can be optimized for both threshold current and differential slope efficiency when the quantum well numbers are reduced to five layers for optical communication systems.
| Original language | English |
|---|---|
| Pages (from-to) | 5859-5865 |
| Number of pages | 7 |
| Journal | International Journal of Modern Physics B |
| Volume | 23 |
| Issue number | 32 |
| DOIs | |
| Publication status | Published - 2009 Dec 30 |
| Externally published | Yes |
Keywords
- Distributed feedback lasers
- Quantum well lasers
- Semiconductor lasers
ASJC Scopus subject areas
- Statistical and Nonlinear Physics
- Condensed Matter Physics