Effect of pseudomorphic multiple quantum well layers on characteristics of uncooled electroluminescent diode

Keyphrases

• Multiple Quantum Wells 100%
• Pseudomorphic 100%
• Uncooled 100%
• Electroluminescent Diodes 100%
• Room Temperature 50%
• Epitaxial Growth 50%
• High Temperature 50%
• Well number 50%
• Quantum Well 50%
• Grating 50%
• Threshold Current 50%
• Slope Efficiency 50%
• Strained Quantum Well 50%
• Light-emitting Devices 50%
• Optical Communication Systems 50%
• Five-layer 50%
• Growth Steps 50%
• Current Slope 50%
• Laser Characteristics 50%
• Semiconductor Lasers 50%
• Differential Slope 50%
• Pseudomorphic Structures 50%
• Laser Performance 50%

Physics

• Quantum Wells 100%
• Multiple Quantum Well 100%
• Electroluminescence 100%
• Room Temperature 50%
• Optical Communication 50%
• Laser Diode 50%
• Semiconductor Diodes 50%

Engineering

• Quantum Well 100%
• Room Temperature 25%
• Current Threshold 25%
• Emitting Device 25%
• Optical Communication System 25%
• Laser Performance 25%