Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering

Kyoung Kook Kim; Hitoshi Tampo; June O. Song; Tae Yeon Seong; Seong Ju Park; Ji Myon Lee; Sang Woo Kim; Shizuo Fujita; Shigeru Niki

doi:10.1143/JJAP.44.4776

Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering

Kyoung Kook Kim, Hitoshi Tampo, June O. Song, Tae Yeon Seong, Seong Ju Park, Ji Myon Lee, Sang Woo Kim, Shizuo Fujita, Shigeru Niki

Research output: Contribution to journal › Article › peer-review

61 Citations (Scopus)

Abstract

High-quality Al-doped n-type ZnO (n-ZnO:Al) epilayers have been grown by an rf-magnetron sputtering technique combined with a rapid thermal annealing (RTA) process. The electrical and optical properties of as-deposited samples are considerably improved upon annealing at 900°C for 3 min in nitrogen ambient. The improvement is attributed to the deoxidation of Al-oxides, i.e., the activation of Al dopants. The samples annealed at 900°C produce a mobility of 65.5 cm²/V·s and a carrier concentration of 1.03 × 10²⁰ cm^-3. It is also shown that the sample surface becomes significantly smoother after annealing. The results show that the RTA process effectively improves the electrical and optical properties of the Al-doped ZnO films.

Original language	English
Pages (from-to)	4776-4779
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	7 A
DOIs	https://doi.org/10.1143/JJAP.44.4776
Publication status	Published - 2005 Jul 8
Externally published	Yes

Keywords

Dopant activation
Hall measurements
N-type Zno
Photoluminescence
Rapid thermal annealing

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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title = "Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering",

abstract = "High-quality Al-doped n-type ZnO (n-ZnO:Al) epilayers have been grown by an rf-magnetron sputtering technique combined with a rapid thermal annealing (RTA) process. The electrical and optical properties of as-deposited samples are considerably improved upon annealing at 900°C for 3 min in nitrogen ambient. The improvement is attributed to the deoxidation of Al-oxides, i.e., the activation of Al dopants. The samples annealed at 900°C produce a mobility of 65.5 cm2/V·s and a carrier concentration of 1.03 × 1020 cm-3. It is also shown that the sample surface becomes significantly smoother after annealing. The results show that the RTA process effectively improves the electrical and optical properties of the Al-doped ZnO films.",

keywords = "Dopant activation, Hall measurements, N-type Zno, Photoluminescence, Rapid thermal annealing",

author = "Kim, {Kyoung Kook} and Hitoshi Tampo and Song, {June O.} and Seong, {Tae Yeon} and Park, {Seong Ju} and Lee, {Ji Myon} and Kim, {Sang Woo} and Shizuo Fujita and Shigeru Niki",

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doi = "10.1143/JJAP.44.4776",

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TY - JOUR

T1 - Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering

AU - Kim, Kyoung Kook

AU - Tampo, Hitoshi

AU - Song, June O.

AU - Seong, Tae Yeon

AU - Park, Seong Ju

AU - Lee, Ji Myon

AU - Kim, Sang Woo

AU - Fujita, Shizuo

AU - Niki, Shigeru

PY - 2005/7/8

Y1 - 2005/7/8

N2 - High-quality Al-doped n-type ZnO (n-ZnO:Al) epilayers have been grown by an rf-magnetron sputtering technique combined with a rapid thermal annealing (RTA) process. The electrical and optical properties of as-deposited samples are considerably improved upon annealing at 900°C for 3 min in nitrogen ambient. The improvement is attributed to the deoxidation of Al-oxides, i.e., the activation of Al dopants. The samples annealed at 900°C produce a mobility of 65.5 cm2/V·s and a carrier concentration of 1.03 × 1020 cm-3. It is also shown that the sample surface becomes significantly smoother after annealing. The results show that the RTA process effectively improves the electrical and optical properties of the Al-doped ZnO films.

AB - High-quality Al-doped n-type ZnO (n-ZnO:Al) epilayers have been grown by an rf-magnetron sputtering technique combined with a rapid thermal annealing (RTA) process. The electrical and optical properties of as-deposited samples are considerably improved upon annealing at 900°C for 3 min in nitrogen ambient. The improvement is attributed to the deoxidation of Al-oxides, i.e., the activation of Al dopants. The samples annealed at 900°C produce a mobility of 65.5 cm2/V·s and a carrier concentration of 1.03 × 1020 cm-3. It is also shown that the sample surface becomes significantly smoother after annealing. The results show that the RTA process effectively improves the electrical and optical properties of the Al-doped ZnO films.

KW - Dopant activation

KW - Hall measurements

KW - N-type Zno

KW - Photoluminescence

KW - Rapid thermal annealing

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U2 - 10.1143/JJAP.44.4776

DO - 10.1143/JJAP.44.4776

M3 - Article

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SN - 0021-4922

VL - 44

SP - 4776

EP - 4779

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 7 A

ER -

Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering

Abstract

Keywords

ASJC Scopus subject areas

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