Effect of redox proteins on the behavior of non-volatile memory

Ji Hyun Lee, Seung Chul Yew, Jinhan Cho, Youn Sang Kim

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles).

Original languageEnglish
Pages (from-to)12008-12010
Number of pages3
JournalChemical Communications
Issue number98
Publication statusPublished - 2012 Nov 14

ASJC Scopus subject areas

  • Catalysis
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • General Chemistry
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Effect of redox proteins on the behavior of non-volatile memory'. Together they form a unique fingerprint.

Cite this