Effect of Sb doping on the opto-electronic properties of SnO 2 nanowires

Yoon Chul Kim; Chang Hoon Yoon; Jaehyun Park; Jangyeol Yoon; Noh Soo Han; Jae Kyu Song; Seung Min Park; Jeong Sook Ha

doi:10.1016/j.tsf.2012.07.001

Effect of Sb doping on the opto-electronic properties of SnO ₂ nanowires

Yoon Chul Kim, Chang Hoon Yoon, Jaehyun Park, Jangyeol Yoon, Noh Soo Han, Jae Kyu Song, Seung Min Park, Jeong Sook Ha

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Antimony (Sb) doping of SnO ₂ nanowires (NWs) was investigated for its optical and electrical effects. The low-temperature photoluminescence spectra of SnO ₂ NWs varied significantly with increasing Sb content, where the temperature-dependence of the visible emission at ca. 400 nm was distinctive with Sb-doping, indicating different defect states, such as neutral and positively charged oxygen vacancies. Field effect transistors (FETs) with low-level Sb-doped SnO ₂ NW channels exhibited higher mobility, charge concentration, and faster response and recovery to UV light than intrinsic SnO ₂ NW FETs.

Original language	English
Pages (from-to)	6471-6475
Number of pages	5
Journal	Thin Solid Films
Volume	520
Issue number	21
DOIs	https://doi.org/10.1016/j.tsf.2012.07.001
Publication status	Published - 2012 Aug 31

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation grants funded by the Ministry of Education, Science and Technology, Korea (No. ROA-2010-0010374 and NRF-2010-0012794 ).

Keywords

Antimony doping
Defect state
Field effect mobility
Photoluminescence
Tin oxide nanowires
UV sensing

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2012.07.001

Cite this

@article{351b4c8543fa46faa331bd329695cbfa,

title = "Effect of Sb doping on the opto-electronic properties of SnO 2 nanowires",

abstract = "Antimony (Sb) doping of SnO 2 nanowires (NWs) was investigated for its optical and electrical effects. The low-temperature photoluminescence spectra of SnO 2 NWs varied significantly with increasing Sb content, where the temperature-dependence of the visible emission at ca. 400 nm was distinctive with Sb-doping, indicating different defect states, such as neutral and positively charged oxygen vacancies. Field effect transistors (FETs) with low-level Sb-doped SnO 2 NW channels exhibited higher mobility, charge concentration, and faster response and recovery to UV light than intrinsic SnO 2 NW FETs.",

keywords = "Antimony doping, Defect state, Field effect mobility, Photoluminescence, Tin oxide nanowires, UV sensing",

author = "Kim, {Yoon Chul} and Yoon, {Chang Hoon} and Jaehyun Park and Jangyeol Yoon and Han, {Noh Soo} and Song, {Jae Kyu} and Park, {Seung Min} and Ha, {Jeong Sook}",

note = "Funding Information: This work was supported by the National Research Foundation grants funded by the Ministry of Education, Science and Technology, Korea (No. ROA-2010-0010374 and NRF-2010-0012794 ).",

year = "2012",

month = aug,

day = "31",

doi = "10.1016/j.tsf.2012.07.001",

language = "English",

volume = "520",

pages = "6471--6475",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

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T1 - Effect of Sb doping on the opto-electronic properties of SnO 2 nanowires

AU - Kim, Yoon Chul

AU - Yoon, Chang Hoon

AU - Park, Jaehyun

AU - Yoon, Jangyeol

AU - Han, Noh Soo

AU - Song, Jae Kyu

AU - Park, Seung Min

AU - Ha, Jeong Sook

N1 - Funding Information: This work was supported by the National Research Foundation grants funded by the Ministry of Education, Science and Technology, Korea (No. ROA-2010-0010374 and NRF-2010-0012794 ).

PY - 2012/8/31

Y1 - 2012/8/31

N2 - Antimony (Sb) doping of SnO 2 nanowires (NWs) was investigated for its optical and electrical effects. The low-temperature photoluminescence spectra of SnO 2 NWs varied significantly with increasing Sb content, where the temperature-dependence of the visible emission at ca. 400 nm was distinctive with Sb-doping, indicating different defect states, such as neutral and positively charged oxygen vacancies. Field effect transistors (FETs) with low-level Sb-doped SnO 2 NW channels exhibited higher mobility, charge concentration, and faster response and recovery to UV light than intrinsic SnO 2 NW FETs.

AB - Antimony (Sb) doping of SnO 2 nanowires (NWs) was investigated for its optical and electrical effects. The low-temperature photoluminescence spectra of SnO 2 NWs varied significantly with increasing Sb content, where the temperature-dependence of the visible emission at ca. 400 nm was distinctive with Sb-doping, indicating different defect states, such as neutral and positively charged oxygen vacancies. Field effect transistors (FETs) with low-level Sb-doped SnO 2 NW channels exhibited higher mobility, charge concentration, and faster response and recovery to UV light than intrinsic SnO 2 NW FETs.

KW - Antimony doping

KW - Defect state

KW - Field effect mobility

KW - Photoluminescence

KW - Tin oxide nanowires

KW - UV sensing

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U2 - 10.1016/j.tsf.2012.07.001

DO - 10.1016/j.tsf.2012.07.001

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JO - Thin Solid Films

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