Effect of Si doping on epitaxial lateral overgrowth of GaN: A spatially resolved micro-Raman scattering study

Hanul Kim; Heesuk Rho; Lee Woon Jang; In Hwan Lee

doi:10.1016/j.cap.2012.07.021

Effect of Si doping on epitaxial lateral overgrowth of GaN: A spatially resolved micro-Raman scattering study

Hanul Kim, Heesuk Rho, Lee Woon Jang, In Hwan Lee

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report spatially resolved Raman scattering from Si-doped epitaxial laterally overgrown GaN structures to investigate spatial variations in stress and free electron concentration. The doping-induced increase in the free electron concentration is relatively higher in the laterally overgrown regions than in the coherently grown regions due to the increased contribution of the high-energy A ₁ longitudinal optical phonon-plasmon coupled mode. In addition, the E ₂(high) [E ₂(low)] phonon energy shifts downward (upward) more significantly in the laterally overgrown regions than in the coherently grown regions. The doping-induced Raman shifts of the E ₂(high) and E ₂(low) phonons in the laterally overgrown regions are approximately -0.6 and 0.11 cm ^-1, respectively, corresponding to the in-plane stress of ∼0.22 GPa.

Original language	English
Pages (from-to)	267-270
Number of pages	4
Journal	Current Applied Physics
Volume	13
Issue number	1
DOIs	https://doi.org/10.1016/j.cap.2012.07.021
Publication status	Published - 2013 Jan
Externally published	Yes

Keywords

GaN
Optical phonons
Raman scattering

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2012.07.021

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title = "Effect of Si doping on epitaxial lateral overgrowth of GaN: A spatially resolved micro-Raman scattering study",

abstract = "We report spatially resolved Raman scattering from Si-doped epitaxial laterally overgrown GaN structures to investigate spatial variations in stress and free electron concentration. The doping-induced increase in the free electron concentration is relatively higher in the laterally overgrown regions than in the coherently grown regions due to the increased contribution of the high-energy A 1 longitudinal optical phonon-plasmon coupled mode. In addition, the E 2(high) [E 2(low)] phonon energy shifts downward (upward) more significantly in the laterally overgrown regions than in the coherently grown regions. The doping-induced Raman shifts of the E 2(high) and E 2(low) phonons in the laterally overgrown regions are approximately -0.6 and 0.11 cm -1, respectively, corresponding to the in-plane stress of ∼0.22 GPa.",

keywords = "GaN, Optical phonons, Raman scattering",

author = "Hanul Kim and Heesuk Rho and Jang, {Lee Woon} and Lee, {In Hwan}",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) (Grant Nos. 2009-0074315 and 2009-0089501 ), by Nano R&D program through the Korea Science and Engineering Foundation funded by the MEST (Grant No. 2007-02939 ), and by research funds of Chonbuk National University in 2010.",

year = "2013",

month = jan,

doi = "10.1016/j.cap.2012.07.021",

language = "English",

volume = "13",

pages = "267--270",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "1",

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T1 - Effect of Si doping on epitaxial lateral overgrowth of GaN

T2 - A spatially resolved micro-Raman scattering study

AU - Kim, Hanul

AU - Rho, Heesuk

AU - Jang, Lee Woon

AU - Lee, In Hwan

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) (Grant Nos. 2009-0074315 and 2009-0089501 ), by Nano R&D program through the Korea Science and Engineering Foundation funded by the MEST (Grant No. 2007-02939 ), and by research funds of Chonbuk National University in 2010.

PY - 2013/1

Y1 - 2013/1

N2 - We report spatially resolved Raman scattering from Si-doped epitaxial laterally overgrown GaN structures to investigate spatial variations in stress and free electron concentration. The doping-induced increase in the free electron concentration is relatively higher in the laterally overgrown regions than in the coherently grown regions due to the increased contribution of the high-energy A 1 longitudinal optical phonon-plasmon coupled mode. In addition, the E 2(high) [E 2(low)] phonon energy shifts downward (upward) more significantly in the laterally overgrown regions than in the coherently grown regions. The doping-induced Raman shifts of the E 2(high) and E 2(low) phonons in the laterally overgrown regions are approximately -0.6 and 0.11 cm -1, respectively, corresponding to the in-plane stress of ∼0.22 GPa.

AB - We report spatially resolved Raman scattering from Si-doped epitaxial laterally overgrown GaN structures to investigate spatial variations in stress and free electron concentration. The doping-induced increase in the free electron concentration is relatively higher in the laterally overgrown regions than in the coherently grown regions due to the increased contribution of the high-energy A 1 longitudinal optical phonon-plasmon coupled mode. In addition, the E 2(high) [E 2(low)] phonon energy shifts downward (upward) more significantly in the laterally overgrown regions than in the coherently grown regions. The doping-induced Raman shifts of the E 2(high) and E 2(low) phonons in the laterally overgrown regions are approximately -0.6 and 0.11 cm -1, respectively, corresponding to the in-plane stress of ∼0.22 GPa.

KW - GaN

KW - Optical phonons

KW - Raman scattering

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U2 - 10.1016/j.cap.2012.07.021

DO - 10.1016/j.cap.2012.07.021

M3 - Article

AN - SCOPUS:84866110131

SN - 1567-1739

VL - 13

SP - 267

EP - 270

JO - Current Applied Physics

JF - Current Applied Physics

IS - 1

ER -

Effect of Si doping on epitaxial lateral overgrowth of GaN: A spatially resolved micro-Raman scattering study

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Keywords

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