Effect of silicon carbide passivation film on the resonance characteristics of cantilever

Ki Yong Choi, Dae Sung Yoon, Tae Song Kim, Duck Kyun Choi

Research output: Contribution to journalArticlepeer-review


We have used silicon carbide (SiC) thin films as an insulating material of the PZT micro cantilevers for electrical and biological passivation. The use of SiC thin films as a passivation layer of the PZT microcantilevers is also seemingly viable to insure the high mass sensitivity as well as the stable passivation. In this study, we report the effect of SiC passivation layer on the performance of the PZT microcantilevers. The micromachined PZT microcantilevers having a structure of SiNx/Ta/Pt/PZT/Pt were fabricated through MEMS processes. In order to improve the mass sensitivity and the passivation, SiC thin films of the high elasticity material were deposited on the cantilever using plasma enhanced chemical vapor deposition (PECVD) at the temperature of 400'C. Plane-strain modulus of SiC thin film was measured by nanoindentation. We observed that SiC thin films showed higher Young's modulus than Si and SiCO 2. Before and after the deposition of SiC thin films, the end-tip deflection and the resonant frequency change of microcantilevers were measured by a confocal microscope and an impedance analyzer. It was confirmed that end-tip deflection of microcantilever was reduced by 13-18% through the deposition of SiC thin films, indicating the stress relaxation of the microcantilevers.

Original languageEnglish
Pages (from-to)76-84
Number of pages9
JournalIntegrated Ferroelectrics
Issue number1
Publication statusPublished - 2007
Externally publishedYes


  • Biosensor
  • Microcantilever
  • PZT
  • Silicon carbide thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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