Effect of Sn Doping on the Thermoelectric Properties of n-type Bi2(Te,Se)3 Alloys

Jae Uk Lee; Deuk Hee Lee; Beomjin Kwon; Dow Bin Hyun; Sahn Nahm; Seung Hyub Baek; Jin Sang Kim

doi:10.1007/s11664-014-3598-z

Effect of Sn Doping on the Thermoelectric Properties of n-type Bi₂(Te,Se)₃ Alloys

Jae Uk Lee, Deuk Hee Lee, Beomjin Kwon, Dow Bin Hyun, Sahn Nahm, Seung Hyub Baek, Jin Sang Kim

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

In the present work, 0.01–0.05wt.% Sn-doped Bi₂(Te_0.9Se_0.1)₃ alloys were prepared by mechanical deformation followed by hot pressing, and their thermoelectric properties were studied. We observed that the Sn element is a very effective dopant as an acceptor to control the carrier concentration in the n-type Bi₂(Te_0.9Se_0.1)₃ alloys to optimize their thermoelectric property. The n-type carrier concentration can be controlled from 4.2 × 10¹⁹/cm³ to 2.4 × 10¹⁹/cm³ by 0.05wt.% Sn-doping. While the Seebeck coefficient and the electrical resistivity are both increased with doping, the power factor remains the same. Therefore, we found that the thermoelectric figure-of-merit becomes maximized at 0.75 when the thermal conductivity has a minimum value for the 0.03wt.% Sn-doped sample.

Original language	English
Pages (from-to)	1926-1930
Number of pages	5
Journal	Journal of Electronic Materials
Volume	44
Issue number	6
DOIs	https://doi.org/10.1007/s11664-014-3598-z
Publication status	Published - 2015 Jun 1

Bibliographical note

Funding Information:
J.-U.L. and D.-H.L. contributed equally to this work. This research was supported by the Technology Innovation Program (10046673) funded by the Ministry of Trade, Industry & Energy (MI, Korea), and KIST-UNIST partnership program through 2V03290.

Publisher Copyright:
© 2014, The Minerals, Metals & Materials Society.

Keywords

Bismuth telluride
Sn doping
hot press
mechanical deformation
thermoelectric

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-014-3598-z

Cite this

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title = "Effect of Sn Doping on the Thermoelectric Properties of n-type Bi2(Te,Se)3 Alloys",

abstract = "In the present work, 0.01–0.05wt.% Sn-doped Bi2(Te0.9Se0.1)3 alloys were prepared by mechanical deformation followed by hot pressing, and their thermoelectric properties were studied. We observed that the Sn element is a very effective dopant as an acceptor to control the carrier concentration in the n-type Bi2(Te0.9Se0.1)3 alloys to optimize their thermoelectric property. The n-type carrier concentration can be controlled from 4.2 × 1019/cm3 to 2.4 × 1019/cm3 by 0.05wt.% Sn-doping. While the Seebeck coefficient and the electrical resistivity are both increased with doping, the power factor remains the same. Therefore, we found that the thermoelectric figure-of-merit becomes maximized at 0.75 when the thermal conductivity has a minimum value for the 0.03wt.% Sn-doped sample.",

keywords = "Bismuth telluride, Sn doping, hot press, mechanical deformation, thermoelectric",

author = "Lee, {Jae Uk} and Lee, {Deuk Hee} and Beomjin Kwon and Hyun, {Dow Bin} and Sahn Nahm and Baek, {Seung Hyub} and Kim, {Jin Sang}",

note = "Funding Information: J.-U.L. and D.-H.L. contributed equally to this work. This research was supported by the Technology Innovation Program (10046673) funded by the Ministry of Trade, Industry & Energy (MI, Korea), and KIST-UNIST partnership program through 2V03290. Publisher Copyright: {\textcopyright} 2014, The Minerals, Metals & Materials Society.",

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AU - Lee, Jae Uk

AU - Lee, Deuk Hee

AU - Kwon, Beomjin

AU - Hyun, Dow Bin

AU - Nahm, Sahn

AU - Baek, Seung Hyub

AU - Kim, Jin Sang

N1 - Funding Information: J.-U.L. and D.-H.L. contributed equally to this work. This research was supported by the Technology Innovation Program (10046673) funded by the Ministry of Trade, Industry & Energy (MI, Korea), and KIST-UNIST partnership program through 2V03290. Publisher Copyright: © 2014, The Minerals, Metals & Materials Society.

PY - 2015/6/1

Y1 - 2015/6/1

N2 - In the present work, 0.01–0.05wt.% Sn-doped Bi2(Te0.9Se0.1)3 alloys were prepared by mechanical deformation followed by hot pressing, and their thermoelectric properties were studied. We observed that the Sn element is a very effective dopant as an acceptor to control the carrier concentration in the n-type Bi2(Te0.9Se0.1)3 alloys to optimize their thermoelectric property. The n-type carrier concentration can be controlled from 4.2 × 1019/cm3 to 2.4 × 1019/cm3 by 0.05wt.% Sn-doping. While the Seebeck coefficient and the electrical resistivity are both increased with doping, the power factor remains the same. Therefore, we found that the thermoelectric figure-of-merit becomes maximized at 0.75 when the thermal conductivity has a minimum value for the 0.03wt.% Sn-doped sample.

AB - In the present work, 0.01–0.05wt.% Sn-doped Bi2(Te0.9Se0.1)3 alloys were prepared by mechanical deformation followed by hot pressing, and their thermoelectric properties were studied. We observed that the Sn element is a very effective dopant as an acceptor to control the carrier concentration in the n-type Bi2(Te0.9Se0.1)3 alloys to optimize their thermoelectric property. The n-type carrier concentration can be controlled from 4.2 × 1019/cm3 to 2.4 × 1019/cm3 by 0.05wt.% Sn-doping. While the Seebeck coefficient and the electrical resistivity are both increased with doping, the power factor remains the same. Therefore, we found that the thermoelectric figure-of-merit becomes maximized at 0.75 when the thermal conductivity has a minimum value for the 0.03wt.% Sn-doped sample.

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