Effect of spin-orbit field on magnetization reversal in GaMnAs single layers with 4-fold in-plane magnetic anisotropy

Kyoul Han, Kyung Jae Lee, Sanghoon Lee, Xinyu Liu, M. Dobrowolska, Jacek K. Furdyna

Research output: Contribution to journalArticlepeer-review

Abstract

Effect of spin-orbit-induced (SOI) field on magnetization reversal in ferromagnetic semiconductor GaMnAs films with 4-fold in-plane magnetic anisotropy has been investigated by planar Hall resistance (PHR) and anisotropic magnetoresistance (AMR) with current along the <110> and <100> crystallographic directions, respectively. Field scan hysteresis of PHR and AMR measured with current of 2.5 mA were observed to be asymmetric respect to zero field, showing different transition fields between positive and negative field regions. In addition, the hysteresis asymmetry is reversed as the sign of the current is reversed from positive to negative. Such dependence of asymmetry on current polarity implies that the current-induced spin-orbit field, which is known to depend on the current direction, significantly affects magnetization reversal. The asymmetry observed for currents along [100], [010], [110], and [11̄0] crystallographic directions is fully consistent with the effects arising from the Dresselhaus-type SOI fields in GaMnAs films.

Original languageEnglish
Article number025229
JournalAIP Advances
Volume13
Issue number2
DOIs
Publication statusPublished - 2023 Feb 1

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) of Korea (2021R1A2C1003338); by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (2022M3F3A2A03014536); by Korea University Grant; and by National Science Foundation Grant DMR 1905277.

Publisher Copyright:
© 2023 Author(s).

ASJC Scopus subject areas

  • General Physics and Astronomy

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