Effect of stiffness modulation on mechanical stability of stretchable a-IGZO TFTs

Hyungjin Park; Kyoungah Cho; Hyungon Oh; Sangsig Kim

doi:10.1016/j.spmi.2018.03.026

Effect of stiffness modulation on mechanical stability of stretchable a-IGZO TFTs

Hyungjin Park, Kyoungah Cho, Hyungon Oh, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this study, we fabricate the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on a stretchable substrate with a buffer stage and investigate the mechanical stability and electrical characteristics when the length of the substrate is stretched by 1.7 times. The buffer stage is responsible for the stiffness modulation of the stretchable substrate. The mobility, the threshold voltage and the on/off ratio of the stretchable a-IGZO TFT are measured to be 18.1 cm²/V·s, 1 V, and 3 × 10⁷, respectively. Our simulation conducted by a three dimensional finite elements method reveals that the stiffness modulation reduces the stress experienced by the substrate in the stretched state by about one-tenth. In addition, the mechanical stability and electrical characteristics of the a-IGZO TFT are maintained even when the substrate is stretched by 1.7 times.

Original language	English
Pages (from-to)	169-172
Number of pages	4
Journal	Superlattices and Microstructures
Volume	117
DOIs	https://doi.org/10.1016/j.spmi.2018.03.026
Publication status	Published - 2018 May

Bibliographical note

Funding Information:
This work was supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No. NRF-2015R1D1A1A01057641 ), by Samsung Display Co. Ltd. , by the Brain Korea 21 Plus Project in 2018 and by the Korea University Grant.

Publisher Copyright:
© 2018 Elsevier Ltd

Keywords

Buffer stage
Stiffness modulation
Stretchable substrate
a-IGZO TFT

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2018.03.026

Cite this

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title = "Effect of stiffness modulation on mechanical stability of stretchable a-IGZO TFTs",

abstract = "In this study, we fabricate the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on a stretchable substrate with a buffer stage and investigate the mechanical stability and electrical characteristics when the length of the substrate is stretched by 1.7 times. The buffer stage is responsible for the stiffness modulation of the stretchable substrate. The mobility, the threshold voltage and the on/off ratio of the stretchable a-IGZO TFT are measured to be 18.1 cm2/V·s, 1 V, and 3 × 107, respectively. Our simulation conducted by a three dimensional finite elements method reveals that the stiffness modulation reduces the stress experienced by the substrate in the stretched state by about one-tenth. In addition, the mechanical stability and electrical characteristics of the a-IGZO TFT are maintained even when the substrate is stretched by 1.7 times.",

keywords = "Buffer stage, Stiffness modulation, Stretchable substrate, a-IGZO TFT",

author = "Hyungjin Park and Kyoungah Cho and Hyungon Oh and Sangsig Kim",

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AU - Park, Hyungjin

AU - Cho, Kyoungah

AU - Oh, Hyungon

AU - Kim, Sangsig

N1 - Funding Information: This work was supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No. NRF-2015R1D1A1A01057641 ), by Samsung Display Co. Ltd. , by the Brain Korea 21 Plus Project in 2018 and by the Korea University Grant. Publisher Copyright: © 2018 Elsevier Ltd

PY - 2018/5

Y1 - 2018/5

N2 - In this study, we fabricate the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on a stretchable substrate with a buffer stage and investigate the mechanical stability and electrical characteristics when the length of the substrate is stretched by 1.7 times. The buffer stage is responsible for the stiffness modulation of the stretchable substrate. The mobility, the threshold voltage and the on/off ratio of the stretchable a-IGZO TFT are measured to be 18.1 cm2/V·s, 1 V, and 3 × 107, respectively. Our simulation conducted by a three dimensional finite elements method reveals that the stiffness modulation reduces the stress experienced by the substrate in the stretched state by about one-tenth. In addition, the mechanical stability and electrical characteristics of the a-IGZO TFT are maintained even when the substrate is stretched by 1.7 times.

AB - In this study, we fabricate the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on a stretchable substrate with a buffer stage and investigate the mechanical stability and electrical characteristics when the length of the substrate is stretched by 1.7 times. The buffer stage is responsible for the stiffness modulation of the stretchable substrate. The mobility, the threshold voltage and the on/off ratio of the stretchable a-IGZO TFT are measured to be 18.1 cm2/V·s, 1 V, and 3 × 107, respectively. Our simulation conducted by a three dimensional finite elements method reveals that the stiffness modulation reduces the stress experienced by the substrate in the stretched state by about one-tenth. In addition, the mechanical stability and electrical characteristics of the a-IGZO TFT are maintained even when the substrate is stretched by 1.7 times.

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SN - 0749-6036

VL - 117

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ER -

Effect of stiffness modulation on mechanical stability of stretchable a-IGZO TFTs

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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