Effect of substrate temperature on residual stress of ZnO thin films prepared by ion beam deposition

Ju Won Jeon; Myoung Kim; Lee Woon Jang; J. L. Hoffman; Nam Soo Kim; In Hwan Lee

doi:10.1007/s13391-012-1091-5

Effect of substrate temperature on residual stress of ZnO thin films prepared by ion beam deposition

Ju Won Jeon, Myoung Kim, Lee Woon Jang, J. L. Hoffman, Nam Soo Kim, In Hwan Lee

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

We have investigated the effect of substrate temperature on micro-structural properties of ZnO thin films prepared by ion beam deposition technique. ZnO thin films were deposited on AlN-buffered Si (111) and sapphire (001) substrates at various substrate temperatures. The structural properties and surface morphologies were examined by high resolution X-ray diffraction (XRD) and field emission scanning electron microscopy, respectively. The RMS roughness was measured by atomic force microscopy. XRD measurements confirmed that the ZnO thin films were grown well on the AlN-buffered Si (111) and sapphire (001) substrates along the c-axis. Minimization of residual stress was carried out by tuning the substrate temperature. The structural properties were notably improved with increasing substrate temperature.

Original language	English
Pages (from-to)	27-32
Number of pages	6
Journal	Electronic Materials Letters
Volume	8
Issue number	1
DOIs	https://doi.org/10.1007/s13391-012-1091-5
Publication status	Published - 2012 Feb
Externally published	Yes

Keywords

ZnO thin film
ion beam deposition
stress
substrate temperature

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1007/s13391-012-1091-5

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abstract = "We have investigated the effect of substrate temperature on micro-structural properties of ZnO thin films prepared by ion beam deposition technique. ZnO thin films were deposited on AlN-buffered Si (111) and sapphire (001) substrates at various substrate temperatures. The structural properties and surface morphologies were examined by high resolution X-ray diffraction (XRD) and field emission scanning electron microscopy, respectively. The RMS roughness was measured by atomic force microscopy. XRD measurements confirmed that the ZnO thin films were grown well on the AlN-buffered Si (111) and sapphire (001) substrates along the c-axis. Minimization of residual stress was carried out by tuning the substrate temperature. The structural properties were notably improved with increasing substrate temperature.",

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T1 - Effect of substrate temperature on residual stress of ZnO thin films prepared by ion beam deposition

AU - Jeon, Ju Won

AU - Kim, Myoung

AU - Jang, Lee Woon

AU - Hoffman, J. L.

AU - Kim, Nam Soo

AU - Lee, In Hwan

PY - 2012/2

Y1 - 2012/2

N2 - We have investigated the effect of substrate temperature on micro-structural properties of ZnO thin films prepared by ion beam deposition technique. ZnO thin films were deposited on AlN-buffered Si (111) and sapphire (001) substrates at various substrate temperatures. The structural properties and surface morphologies were examined by high resolution X-ray diffraction (XRD) and field emission scanning electron microscopy, respectively. The RMS roughness was measured by atomic force microscopy. XRD measurements confirmed that the ZnO thin films were grown well on the AlN-buffered Si (111) and sapphire (001) substrates along the c-axis. Minimization of residual stress was carried out by tuning the substrate temperature. The structural properties were notably improved with increasing substrate temperature.

AB - We have investigated the effect of substrate temperature on micro-structural properties of ZnO thin films prepared by ion beam deposition technique. ZnO thin films were deposited on AlN-buffered Si (111) and sapphire (001) substrates at various substrate temperatures. The structural properties and surface morphologies were examined by high resolution X-ray diffraction (XRD) and field emission scanning electron microscopy, respectively. The RMS roughness was measured by atomic force microscopy. XRD measurements confirmed that the ZnO thin films were grown well on the AlN-buffered Si (111) and sapphire (001) substrates along the c-axis. Minimization of residual stress was carried out by tuning the substrate temperature. The structural properties were notably improved with increasing substrate temperature.

KW - ZnO thin film

KW - ion beam deposition

KW - stress

KW - substrate temperature

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Effect of substrate temperature on residual stress of ZnO thin films prepared by ion beam deposition

Abstract

Keywords

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