Abstract
In this study we investigate the influence of substrate materials on the electrical characteristics of feedback field-effect transistors (FETs) when subjected to bending fatigue. Each of our transistors are composed of a p +-i-n + doped silicon nanowire and dual-top metal gates. Feedback FETs on Ecoflex substrates feature outstanding stability compared to those on polyethersulphone and polydimethysiloxane substrates, even at a bending strain of 11.67%. The threshold voltage shift is within the range of 0.3 V, and the on-current only decreases by 15.5% (or less), when compared to the initial flat conditions. Moreover, our devices have outstanding reliability, even after 5000 cycles of repeated bending.
Original language | English |
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Article number | 105009 |
Journal | Semiconductor Science and Technology |
Volume | 33 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2018 Sept 26 |
Bibliographical note
Funding Information:This work was partly supported by a National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (NRF-2016R1E1A1A02920171); the-Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program (10067791, ‘Development of fabrication and device structure of feedback Si channel 1T-SRAM for artificial intelligence’); and the Brain Korea 21 Plus Project in 2018.
Publisher Copyright:
© 2018 IOP Publishing Ltd.
Keywords
- bending stress
- feedback field-effect transistor
- plastic substrate
- positive feedback loop
- silicon nanowire
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry