Effect of substrates on the electrical characteristics of a silicon nanowire feedback field-effect transistor under bending stresses

Yoonjoong Kim, Sangsig Kim

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    In this study we investigate the influence of substrate materials on the electrical characteristics of feedback field-effect transistors (FETs) when subjected to bending fatigue. Each of our transistors are composed of a p +-i-n + doped silicon nanowire and dual-top metal gates. Feedback FETs on Ecoflex substrates feature outstanding stability compared to those on polyethersulphone and polydimethysiloxane substrates, even at a bending strain of 11.67%. The threshold voltage shift is within the range of 0.3 V, and the on-current only decreases by 15.5% (or less), when compared to the initial flat conditions. Moreover, our devices have outstanding reliability, even after 5000 cycles of repeated bending.

    Original languageEnglish
    Article number105009
    JournalSemiconductor Science and Technology
    Volume33
    Issue number10
    DOIs
    Publication statusPublished - 2018 Sept 26

    Bibliographical note

    Funding Information:
    This work was partly supported by a National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (NRF-2016R1E1A1A02920171); the-Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program (10067791, ‘Development of fabrication and device structure of feedback Si channel 1T-SRAM for artificial intelligence’); and the Brain Korea 21 Plus Project in 2018.

    Publisher Copyright:
    © 2018 IOP Publishing Ltd.

    Keywords

    • bending stress
    • feedback field-effect transistor
    • plastic substrate
    • positive feedback loop
    • silicon nanowire

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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