Effect of Te inclusions in CdZnTe crystals at different temperatures

A. Hossain, A. E. Bolotnikov, G. S. Camarda, R. Gul, K. H. Kim, Y. Cui, G. Yang, L. Xu, R. B. James

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

CdZnTe crystals often exhibit nonuniformities due to the presence of Te inclusions and dislocations. High concentrations of such defects in these crystals generally entail severe charge-trapping, a major problem in ensuring the device's satisfactory performance. In this study, we employed a high-intensity, high-spatial-resolution synchrotron x-ray beam as the ideal tool to generate charges by focusing it over the large Te inclusions, and then observing the carrier's response at room- and at low-temperatures. A high spatial 5-μm resolution raster scan revealed the fine details of the presence of extended defects, like Te inclusions and dislocations in the CdZnTe crystals. A noticeable change was observed in the efficiency of electron charge collection at low temperature (1 °C), but it was hardly altered at room-temperature.

Original languageEnglish
Article number044504
JournalJournal of Applied Physics
Volume109
Issue number4
DOIs
Publication statusPublished - 2011 Feb 15
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by U.S. Department of Energy, Office of Nonproliferation Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH1-886 with the U.S. Department of Energy. The United States Government retains, and the publisher, by accepting the article for publication, acknowledges, a worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for the United States Government purposes.

ASJC Scopus subject areas

  • General Physics and Astronomy

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