Effect of Te inclusions in CdZnTe crystals at different temperatures

A. Hossain; A. E. Bolotnikov; G. S. Camarda; R. Gul; K. H. Kim; Y. Cui; G. Yang; L. Xu; R. B. James

doi:10.1063/1.3549236

Effect of Te inclusions in CdZnTe crystals at different temperatures

A. Hossain^*, A. E. Bolotnikov, G. S. Camarda, R. Gul, K. H. Kim, Y. Cui, G. Yang, L. Xu, R. B. James

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

CdZnTe crystals often exhibit nonuniformities due to the presence of Te inclusions and dislocations. High concentrations of such defects in these crystals generally entail severe charge-trapping, a major problem in ensuring the device's satisfactory performance. In this study, we employed a high-intensity, high-spatial-resolution synchrotron x-ray beam as the ideal tool to generate charges by focusing it over the large Te inclusions, and then observing the carrier's response at room- and at low-temperatures. A high spatial 5-μm resolution raster scan revealed the fine details of the presence of extended defects, like Te inclusions and dislocations in the CdZnTe crystals. A noticeable change was observed in the efficiency of electron charge collection at low temperature (1 °C), but it was hardly altered at room-temperature.

Original language	English
Article number	044504
Journal	Journal of Applied Physics
Volume	109
Issue number	4
DOIs	https://doi.org/10.1063/1.3549236
Publication status	Published - 2011 Feb 15
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by U.S. Department of Energy, Office of Nonproliferation Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH1-886 with the U.S. Department of Energy. The United States Government retains, and the publisher, by accepting the article for publication, acknowledges, a worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for the United States Government purposes.

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.3549236

Cite this

@article{77f425dae20140b7a91c173464250d41,

title = "Effect of Te inclusions in CdZnTe crystals at different temperatures",

abstract = "CdZnTe crystals often exhibit nonuniformities due to the presence of Te inclusions and dislocations. High concentrations of such defects in these crystals generally entail severe charge-trapping, a major problem in ensuring the device's satisfactory performance. In this study, we employed a high-intensity, high-spatial-resolution synchrotron x-ray beam as the ideal tool to generate charges by focusing it over the large Te inclusions, and then observing the carrier's response at room- and at low-temperatures. A high spatial 5-μm resolution raster scan revealed the fine details of the presence of extended defects, like Te inclusions and dislocations in the CdZnTe crystals. A noticeable change was observed in the efficiency of electron charge collection at low temperature (1 °C), but it was hardly altered at room-temperature.",

author = "A. Hossain and Bolotnikov, \{A. E.\} and Camarda, \{G. S.\} and R. Gul and Kim, \{K. H.\} and Y. Cui and G. Yang and L. Xu and James, \{R. B.\}",

note = "Funding Information: This work was supported by U.S. Department of Energy, Office of Nonproliferation Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH1-886 with the U.S. Department of Energy. The United States Government retains, and the publisher, by accepting the article for publication, acknowledges, a worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for the United States Government purposes.",

year = "2011",

month = feb,

day = "15",

doi = "10.1063/1.3549236",

language = "English",

volume = "109",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Effect of Te inclusions in CdZnTe crystals at different temperatures

AU - Hossain, A.

AU - Bolotnikov, A. E.

AU - Camarda, G. S.

AU - Gul, R.

AU - Kim, K. H.

AU - Cui, Y.

AU - Yang, G.

AU - Xu, L.

AU - James, R. B.

N1 - Funding Information: This work was supported by U.S. Department of Energy, Office of Nonproliferation Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH1-886 with the U.S. Department of Energy. The United States Government retains, and the publisher, by accepting the article for publication, acknowledges, a worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for the United States Government purposes.

PY - 2011/2/15

Y1 - 2011/2/15

N2 - CdZnTe crystals often exhibit nonuniformities due to the presence of Te inclusions and dislocations. High concentrations of such defects in these crystals generally entail severe charge-trapping, a major problem in ensuring the device's satisfactory performance. In this study, we employed a high-intensity, high-spatial-resolution synchrotron x-ray beam as the ideal tool to generate charges by focusing it over the large Te inclusions, and then observing the carrier's response at room- and at low-temperatures. A high spatial 5-μm resolution raster scan revealed the fine details of the presence of extended defects, like Te inclusions and dislocations in the CdZnTe crystals. A noticeable change was observed in the efficiency of electron charge collection at low temperature (1 °C), but it was hardly altered at room-temperature.

AB - CdZnTe crystals often exhibit nonuniformities due to the presence of Te inclusions and dislocations. High concentrations of such defects in these crystals generally entail severe charge-trapping, a major problem in ensuring the device's satisfactory performance. In this study, we employed a high-intensity, high-spatial-resolution synchrotron x-ray beam as the ideal tool to generate charges by focusing it over the large Te inclusions, and then observing the carrier's response at room- and at low-temperatures. A high spatial 5-μm resolution raster scan revealed the fine details of the presence of extended defects, like Te inclusions and dislocations in the CdZnTe crystals. A noticeable change was observed in the efficiency of electron charge collection at low temperature (1 °C), but it was hardly altered at room-temperature.

UR - https://www.scopus.com/pages/publications/79952124920

U2 - 10.1063/1.3549236

DO - 10.1063/1.3549236

M3 - Article

AN - SCOPUS:79952124920

SN - 0021-8979

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 044504

ER -

Effect of Te inclusions in CdZnTe crystals at different temperatures

Abstract

Bibliographical note

ASJC Scopus subject areas

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