Effect of temperature and injection current on characteristics of TO-CAN packaged Fabry-Perot laser diode

Jae Ho Han; Sung Woong Park

doi:10.1016/j.cap.2005.07.059

Effect of temperature and injection current on characteristics of TO-CAN packaged Fabry-Perot laser diode

Jae Ho Han, Sung Woong Park

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We fabricated and investigated the thermal characteristics of TO-CAN (transistor-outline-can) packaged long wavelength GaInAsP/InP Fabry-Perot laser diode. Characteristic temperature of 55 K and peak wavelength shift of 0.4 nm/°C depending on the temperatures were obtained. Furthermore, overheating of semiconductor laser originated from thermal resistance is analyzed and evaluated by measuring junction temperature. Results from experiment and estimation are compared at extreme operating conditions in which show agreement within 1 °C.

Original language	English
Pages (from-to)	6-9
Number of pages	4
Journal	Current Applied Physics
Volume	7
Issue number	1
DOIs	https://doi.org/10.1016/j.cap.2005.07.059
Publication status	Published - 2007 Jan
Externally published	Yes

Keywords

Junction temperature
Laser diode
Semiconductor lasers
Thermal characteristics

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

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10.1016/j.cap.2005.07.059

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title = "Effect of temperature and injection current on characteristics of TO-CAN packaged Fabry-Perot laser diode",

abstract = "We fabricated and investigated the thermal characteristics of TO-CAN (transistor-outline-can) packaged long wavelength GaInAsP/InP Fabry-Perot laser diode. Characteristic temperature of 55 K and peak wavelength shift of 0.4 nm/°C depending on the temperatures were obtained. Furthermore, overheating of semiconductor laser originated from thermal resistance is analyzed and evaluated by measuring junction temperature. Results from experiment and estimation are compared at extreme operating conditions in which show agreement within 1 °C.",

keywords = "Junction temperature, Laser diode, Semiconductor lasers, Thermal characteristics",

author = "Han, {Jae Ho} and Park, {Sung Woong}",

year = "2007",

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doi = "10.1016/j.cap.2005.07.059",

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AU - Han, Jae Ho

AU - Park, Sung Woong

PY - 2007/1

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N2 - We fabricated and investigated the thermal characteristics of TO-CAN (transistor-outline-can) packaged long wavelength GaInAsP/InP Fabry-Perot laser diode. Characteristic temperature of 55 K and peak wavelength shift of 0.4 nm/°C depending on the temperatures were obtained. Furthermore, overheating of semiconductor laser originated from thermal resistance is analyzed and evaluated by measuring junction temperature. Results from experiment and estimation are compared at extreme operating conditions in which show agreement within 1 °C.

AB - We fabricated and investigated the thermal characteristics of TO-CAN (transistor-outline-can) packaged long wavelength GaInAsP/InP Fabry-Perot laser diode. Characteristic temperature of 55 K and peak wavelength shift of 0.4 nm/°C depending on the temperatures were obtained. Furthermore, overheating of semiconductor laser originated from thermal resistance is analyzed and evaluated by measuring junction temperature. Results from experiment and estimation are compared at extreme operating conditions in which show agreement within 1 °C.

KW - Junction temperature

KW - Laser diode

KW - Semiconductor lasers

KW - Thermal characteristics

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U2 - 10.1016/j.cap.2005.07.059

DO - 10.1016/j.cap.2005.07.059

M3 - Article

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JO - Current Applied Physics

JF - Current Applied Physics

IS - 1

ER -

Effect of temperature and injection current on characteristics of TO-CAN packaged Fabry-Perot laser diode

Abstract

Keywords

ASJC Scopus subject areas

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