Effect of the deposition temperature on the transmittance & electrical conductivity of In_1.6Zn_0.2Sn_0.2O _3-δ thin films prepared by RF-magnetron sputtering

In order to reduce the indium contents in transparent conducting oxide(TCO) thin films of In_1.6~1.8Zn_0.2Sn_0.2~0.4O ₃ (IZTO), In_1.6Zn_0.2Sn_0.2O _3-δ(IZTO) was prepared by replacing indium with Zn and Sn. The TCO films were deposited via RF-magnetron sputtering of the IZTO target at various deposition temperatures and its film characteristics were investigated. When deposited in an Ar atmosphere at 400°C, the electrical resistivity of the film decreased to 6.34 × 10^-4 Ω·cm and the optical transmittance was 80%. As the deposition temperature increased, the crystallinity of the IZTO film was enhanced. As a result, the electrical conductivity and transmittance properties were improved. This demonstrates the possibility of replacing ITO TCO film with IZTO.