TY - JOUR
T1 - Effect of the low-temperature annealing on Zn-doped indium-tin-oxide films for silicon heterojunction solar cells
AU - Lee, Seunghun
AU - Lee, Jong Han
AU - Tark, Sung Ju
AU - Choi, Suyoung
AU - Kim, Chan Seok
AU - Lee, Jeong Chul
AU - Kim, Won Mok
AU - Kim, Donghwan
PY - 2012/10
Y1 - 2012/10
N2 - The effects of the low-temperature annealing on Zn-doped indium-tin-oxide (ITO) films such as the electrical, optical and structural properties were investigated. Zn-doped ITO films were fabricated by rf magnetron sputtering of ITO and Al-doped ZnO (AZO) targets on corning glass at room temperature. The content of Zn increased with increasing the power of AZO target. The carrier concentration of films shows the decreasing behaviour with increasing the content of Zn, due to a carrier compensation originating from the substitution of a doped Zn for an In or interstitial site. After the low-temperature annealing at 180 °C in vacuum, all films were slightly decreased a carrier concentration and increased the hall mobility because of the absorption of oxygen on the surface films. In addition, the average transmittance did not show a considerable change and had a high values over 80%. Especially, the Zn-doped ITO with atomic ratio of Zn/(In + Zn) of 6.8 at.% had the resistivity of 4 × 10 -4 Ωcm, the highest hall mobility of 41 cm 2 V -1 s -1, and the average transmittance of 82%.
AB - The effects of the low-temperature annealing on Zn-doped indium-tin-oxide (ITO) films such as the electrical, optical and structural properties were investigated. Zn-doped ITO films were fabricated by rf magnetron sputtering of ITO and Al-doped ZnO (AZO) targets on corning glass at room temperature. The content of Zn increased with increasing the power of AZO target. The carrier concentration of films shows the decreasing behaviour with increasing the content of Zn, due to a carrier compensation originating from the substitution of a doped Zn for an In or interstitial site. After the low-temperature annealing at 180 °C in vacuum, all films were slightly decreased a carrier concentration and increased the hall mobility because of the absorption of oxygen on the surface films. In addition, the average transmittance did not show a considerable change and had a high values over 80%. Especially, the Zn-doped ITO with atomic ratio of Zn/(In + Zn) of 6.8 at.% had the resistivity of 4 × 10 -4 Ωcm, the highest hall mobility of 41 cm 2 V -1 s -1, and the average transmittance of 82%.
UR - http://www.scopus.com/inward/record.url?scp=84869115405&partnerID=8YFLogxK
U2 - 10.1143/JJAP.51.10NA16
DO - 10.1143/JJAP.51.10NA16
M3 - Article
AN - SCOPUS:84869115405
SN - 0021-4922
VL - 51
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 10 PART 2
M1 - 10NA16
ER -