Effect of the Mo back contact microstructure on the preferred orientation of CIGS thin films

Ju Heon Yoon; Kwan Hee Yoon; Jong Keun Kim; Won Mok Kim; Jong Keuk Park; Taek Sung Lee; Young Joon Baik; Tae Yeon Seong; Jeung Hyun Jeong

doi:10.1109/PVSC.2010.5614175

Effect of the Mo back contact microstructure on the preferred orientation of CIGS thin films

Ju Heon Yoon, Kwan Hee Yoon, Jong Keun Kim, Won Mok Kim, Jong Keuk Park, Taek Sung Lee, Young Joon Baik, Tae Yeon Seong, Jeung Hyun Jeong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

29 Citations (Scopus)

Abstract

The effect of varying microstructures of Mo films on CIGS preferred orientation has been studied by changing Mo working pressure (in sputtering). CIGS I(220)/I(112) and IGS I(300)/I(006) have strong dependencies of the residual stress of Mo closely related to its microstructures: they increases with Mo pressure and then gradually decreases with Mo pressure, as the residual stress does. The trend is exactly opposite to the known effect due to Na. Thus this work shows that Mo microstructure itself can determine IGS and CIGS textures without assistance of other factors such as Na. XRD analysis on selenized Mo and TEM work on IGS/Mo show that MoSe₂ reactivity itself influences the IGS texture more than its orientation. In addition, MoSe ₂ reactivity depends on the in-grain density of Mo which is linearly related to the residual stress.

Original language	English
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	2443-2447
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2010.5614175
Publication status	Published - 2010
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 2010 Jun 20 → 2010 Jun 25

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/Territory	United States
City	Honolulu, HI
Period	10/6/20 → 10/6/25

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/PVSC.2010.5614175

Cite this

Yoon, J. H., Yoon, K. H., Kim, J. K., Kim, W. M., Park, J. K., Lee, T. S., Baik, Y. J., Seong, T. Y., & Jeong, J. H. (2010). Effect of the Mo back contact microstructure on the preferred orientation of CIGS thin films. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 2443-2447). Article 5614175 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5614175

Effect of the Mo back contact microstructure on the preferred orientation of CIGS thin films. / Yoon, Ju Heon; Yoon, Kwan Hee; Kim, Jong Keun et al.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 2443-2447 5614175 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yoon, JH, Yoon, KH, Kim, JK, Kim, WM, Park, JK, Lee, TS, Baik, YJ, Seong, TY & Jeong, JH 2010, Effect of the Mo back contact microstructure on the preferred orientation of CIGS thin films. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5614175, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2443-2447, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 10/6/20. https://doi.org/10.1109/PVSC.2010.5614175

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title = "Effect of the Mo back contact microstructure on the preferred orientation of CIGS thin films",

abstract = "The effect of varying microstructures of Mo films on CIGS preferred orientation has been studied by changing Mo working pressure (in sputtering). CIGS I(220)/I(112) and IGS I(300)/I(006) have strong dependencies of the residual stress of Mo closely related to its microstructures: they increases with Mo pressure and then gradually decreases with Mo pressure, as the residual stress does. The trend is exactly opposite to the known effect due to Na. Thus this work shows that Mo microstructure itself can determine IGS and CIGS textures without assistance of other factors such as Na. XRD analysis on selenized Mo and TEM work on IGS/Mo show that MoSe2 reactivity itself influences the IGS texture more than its orientation. In addition, MoSe 2 reactivity depends on the in-grain density of Mo which is linearly related to the residual stress.",

author = "Yoon, {Ju Heon} and Yoon, {Kwan Hee} and Kim, {Jong Keun} and Kim, {Won Mok} and Park, {Jong Keuk} and Lee, {Taek Sung} and Baik, {Young Joon} and Seong, {Tae Yeon} and Jeong, {Jeung Hyun}",

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AU - Yoon, Ju Heon

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AU - Kim, Won Mok

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AU - Lee, Taek Sung

AU - Baik, Young Joon

AU - Seong, Tae Yeon

AU - Jeong, Jeung Hyun

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N2 - The effect of varying microstructures of Mo films on CIGS preferred orientation has been studied by changing Mo working pressure (in sputtering). CIGS I(220)/I(112) and IGS I(300)/I(006) have strong dependencies of the residual stress of Mo closely related to its microstructures: they increases with Mo pressure and then gradually decreases with Mo pressure, as the residual stress does. The trend is exactly opposite to the known effect due to Na. Thus this work shows that Mo microstructure itself can determine IGS and CIGS textures without assistance of other factors such as Na. XRD analysis on selenized Mo and TEM work on IGS/Mo show that MoSe2 reactivity itself influences the IGS texture more than its orientation. In addition, MoSe 2 reactivity depends on the in-grain density of Mo which is linearly related to the residual stress.

AB - The effect of varying microstructures of Mo films on CIGS preferred orientation has been studied by changing Mo working pressure (in sputtering). CIGS I(220)/I(112) and IGS I(300)/I(006) have strong dependencies of the residual stress of Mo closely related to its microstructures: they increases with Mo pressure and then gradually decreases with Mo pressure, as the residual stress does. The trend is exactly opposite to the known effect due to Na. Thus this work shows that Mo microstructure itself can determine IGS and CIGS textures without assistance of other factors such as Na. XRD analysis on selenized Mo and TEM work on IGS/Mo show that MoSe2 reactivity itself influences the IGS texture more than its orientation. In addition, MoSe 2 reactivity depends on the in-grain density of Mo which is linearly related to the residual stress.

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Effect of the Mo back contact microstructure on the preferred orientation of CIGS thin films

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