Effect of the N2/(Ar+N2) flow ratio on the synthesis of zirconium nitride thin films by DC reactive sputtering

Dong Ho Kim; Chul Min Kim; Eun Hong Kim; Young Chul Shin; Tae Geun Kim; Cheong Hyun Roh; Cheol Koo Hahn

doi:10.3938/jkps.55.1149

Effect of the N₂/(Ar+N₂) flow ratio on the synthesis of zirconium nitride thin films by DC reactive sputtering

Dong Ho Kim, Chul Min Kim, Eun Hong Kim, Young Chul Shin, Tae Geun Kim, Cheong Hyun Roh, Cheol Koo Hahn

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We investigate the effect of the N₂/(Ar+N₂) flow ratio (F(N₂)) on the structural and the electrical properties of ZrN_x thin films deposited on Si(111) substrates by DC reactive sputtering at room temperature (R.T.), by using glancing-angle X-ray diffraction (GA-XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films show stoichiometric ZrN structures for F(N₂) from 4.3% to 10% and changed into non-stoichiometric Zr₃N₄ structures with increasing F(N₂) from 11.8% to 25%. On the other hand, the electrical resistivity rapidly increase from 40.8 μ·cm to 1291.87 μ·cm with increasing F(N₂), which may be related to compositional changes from ZrN to Zr₃N₄. We also observed that the stoichiometric ZrN film had larger and denser granular-type grains because of it had a higher growth rate of grains than the non-stoichiometric Zr₃N₄ film.

Original language	English
Pages (from-to)	1149-1152
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	55
Issue number	3
DOIs	https://doi.org/10.3938/jkps.55.1149
Publication status	Published - 2009 Sept

Bibliographical note

Funding Information:
Author Shreenu Pattanaik acknowledges CSIR, New Delhi, India for awarding senior research fellowship (SRF Sanction No.:C9/969 (0004)/2018-EMR-I) to carry out her research work. The authors are grateful to the Central Instrumentation Facility, Pondichery University for providing VSM experimental facilities.

Keywords

DC reactive sputtering
Grain growth
Stoichiometry
Zirconium nitride (ZrN)

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.3938/jkps.55.1149

Cite this

@article{d6e9cb81cf7b4c0382c6884830ae7d76,

title = "Effect of the N2/(Ar+N2) flow ratio on the synthesis of zirconium nitride thin films by DC reactive sputtering",

abstract = "We investigate the effect of the N2/(Ar+N2) flow ratio (F(N2)) on the structural and the electrical properties of ZrNx thin films deposited on Si(111) substrates by DC reactive sputtering at room temperature (R.T.), by using glancing-angle X-ray diffraction (GA-XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films show stoichiometric ZrN structures for F(N2) from 4.3% to 10% and changed into non-stoichiometric Zr3N4 structures with increasing F(N2) from 11.8% to 25%. On the other hand, the electrical resistivity rapidly increase from 40.8 μ·cm to 1291.87 μ·cm with increasing F(N2), which may be related to compositional changes from ZrN to Zr3N4. We also observed that the stoichiometric ZrN film had larger and denser granular-type grains because of it had a higher growth rate of grains than the non-stoichiometric Zr3N4 film.",

keywords = "DC reactive sputtering, Grain growth, Stoichiometry, Zirconium nitride (ZrN)",

author = "{Ho Kim}, Dong and Kim, {Chul Min} and Kim, {Eun Hong} and Shin, {Young Chul} and Kim, {Tae Geun} and Roh, {Cheong Hyun} and Hahn, {Cheol Koo}",

note = "Funding Information: Author Shreenu Pattanaik acknowledges CSIR, New Delhi, India for awarding senior research fellowship (SRF Sanction No.:C9/969 (0004)/2018-EMR-I) to carry out her research work. The authors are grateful to the Central Instrumentation Facility, Pondichery University for providing VSM experimental facilities.",

year = "2009",

month = sep,

doi = "10.3938/jkps.55.1149",

language = "English",

volume = "55",

pages = "1149--1152",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "3",

}

TY - JOUR

T1 - Effect of the N2/(Ar+N2) flow ratio on the synthesis of zirconium nitride thin films by DC reactive sputtering

AU - Ho Kim, Dong

AU - Kim, Chul Min

AU - Kim, Eun Hong

AU - Shin, Young Chul

AU - Kim, Tae Geun

AU - Roh, Cheong Hyun

AU - Hahn, Cheol Koo

N1 - Funding Information: Author Shreenu Pattanaik acknowledges CSIR, New Delhi, India for awarding senior research fellowship (SRF Sanction No.:C9/969 (0004)/2018-EMR-I) to carry out her research work. The authors are grateful to the Central Instrumentation Facility, Pondichery University for providing VSM experimental facilities.

PY - 2009/9

Y1 - 2009/9

N2 - We investigate the effect of the N2/(Ar+N2) flow ratio (F(N2)) on the structural and the electrical properties of ZrNx thin films deposited on Si(111) substrates by DC reactive sputtering at room temperature (R.T.), by using glancing-angle X-ray diffraction (GA-XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films show stoichiometric ZrN structures for F(N2) from 4.3% to 10% and changed into non-stoichiometric Zr3N4 structures with increasing F(N2) from 11.8% to 25%. On the other hand, the electrical resistivity rapidly increase from 40.8 μ·cm to 1291.87 μ·cm with increasing F(N2), which may be related to compositional changes from ZrN to Zr3N4. We also observed that the stoichiometric ZrN film had larger and denser granular-type grains because of it had a higher growth rate of grains than the non-stoichiometric Zr3N4 film.

AB - We investigate the effect of the N2/(Ar+N2) flow ratio (F(N2)) on the structural and the electrical properties of ZrNx thin films deposited on Si(111) substrates by DC reactive sputtering at room temperature (R.T.), by using glancing-angle X-ray diffraction (GA-XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films show stoichiometric ZrN structures for F(N2) from 4.3% to 10% and changed into non-stoichiometric Zr3N4 structures with increasing F(N2) from 11.8% to 25%. On the other hand, the electrical resistivity rapidly increase from 40.8 μ·cm to 1291.87 μ·cm with increasing F(N2), which may be related to compositional changes from ZrN to Zr3N4. We also observed that the stoichiometric ZrN film had larger and denser granular-type grains because of it had a higher growth rate of grains than the non-stoichiometric Zr3N4 film.

KW - DC reactive sputtering

KW - Grain growth

KW - Stoichiometry

KW - Zirconium nitride (ZrN)

UR - http://www.scopus.com/inward/record.url?scp=84905090510&partnerID=8YFLogxK

U2 - 10.3938/jkps.55.1149

DO - 10.3938/jkps.55.1149

M3 - Article

AN - SCOPUS:84905090510

SN - 0374-4884

VL - 55

SP - 1149

EP - 1152

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -