Effect of the phosphorus gettering on Si heterojunction solar cells

Hyomin Park, Sung Ju Tark, Chan Seok Kim, Sungeun Park, Young Do Kim, Chang Sik Son, Jeong Chul Lee, Donghwan Kim

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)

    Abstract

    To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P) gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8μs. Open-circuit voltage and short-circuit current density increase from 577 to 598mV and 27.8 to 29.8mA/cm2, respectively. The efficiency of solar cells increases from 11.9 to 13.4% P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

    Original languageEnglish
    Article number794876
    JournalInternational Journal of Photoenergy
    Volume2012
    DOIs
    Publication statusPublished - 2012

    ASJC Scopus subject areas

    • General Chemistry
    • Atomic and Molecular Physics, and Optics
    • Renewable Energy, Sustainability and the Environment
    • General Materials Science

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