Abstract
In this paper, we focused on the effects of the plasma treatment of the anode electrode of organic light emitting diodes (OLED) on the growth of hole-injection layer (HIL). The CF4 plasma (CF4-P) treatment, which is known for efficient method to enhance the performance of OLED, was not effective on the OLED with the HIL material copper phthalocyanine (CuPc). The CF4-P treated OLED showed remarkably reduced electroluminescence (EL) characteristics while the O2 plasma treated OLED showed improved EL efficiency. The dependence of the CuPc growth on the polarity of substrate induced the morphological difference of the HIL, and finally resulted in the different device characteristics.
Original language | English |
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Pages (from-to) | 4108-4110 |
Number of pages | 3 |
Journal | Thin Solid Films |
Volume | 517 |
Issue number | 14 |
DOIs | |
Publication status | Published - 2009 May 29 |
Bibliographical note
Funding Information:This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea Ministry of Education, Science and Technology (MEST) (No. R11-2007-045-01003-0), and partially supported by the National Research Laboratory (NRL, R0A-2007-000-20111-0) Program of the KOSEF.
Keywords
- Copper phthalocyanine
- Hole-injection layer
- Morphology
- Organic light-emitting diodes
- Surface polarity
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry