Effect of the top electrode materials on the resistive switching characteristics of TiO2 thin film

Sang Chul Oh; Ho Yong Jung; Heon Lee

doi:10.1063/1.3596576

Effect of the top electrode materials on the resistive switching characteristics of TiO₂ thin film

Sang Chul Oh, Ho Yong Jung, Heon Lee

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Various metals, such as Pt, stainless steel (SUS), Al, Ni, and Ti, were used as a top electrode (TE) to evaluate the dependency of the resistive switching characteristics on the TE of the metal/TiO₂/Pt structure. The variation of the chemical composition of TiO₂ in the metal/TiO₂/Pt structure before and after switching was examined to identify the factors affecting the resistive switching characteristics of the samples with various TE materials. In the case of TE/TiO₂/Pt structures showing unstable resistive switching behavior, e.g., those with the Al, Ni, and Ti TEs, secondary ion mass spectrometry revealed an increase in the oxygen concentration at the interface area between the TE metal and TiO ₂. This suggests that the oxidation reaction at the interface between the TE metal and TiO₂ might cause the TE/TiO₂/Pt structure to exhibit unstable resistive switching characteristics. According to these results, the oxidation reaction at the interface between the metal TE and TiO₂ thin film is a primary factor affecting the resistive switching characteristics of TiO₂-based Resistive Random Access Memory devices.

Original language	English
Article number	124511
Journal	Journal of Applied Physics
Volume	109
Issue number	12
DOIs	https://doi.org/10.1063/1.3596576
Publication status	Published - 2011 Jun 15

Bibliographical note

Funding Information:
This work was financially supported through the Hynix-Korea University Nano-Semiconductor Program.

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.3596576

Cite this

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title = "Effect of the top electrode materials on the resistive switching characteristics of TiO2 thin film",

abstract = "Various metals, such as Pt, stainless steel (SUS), Al, Ni, and Ti, were used as a top electrode (TE) to evaluate the dependency of the resistive switching characteristics on the TE of the metal/TiO2/Pt structure. The variation of the chemical composition of TiO2 in the metal/TiO2/Pt structure before and after switching was examined to identify the factors affecting the resistive switching characteristics of the samples with various TE materials. In the case of TE/TiO2/Pt structures showing unstable resistive switching behavior, e.g., those with the Al, Ni, and Ti TEs, secondary ion mass spectrometry revealed an increase in the oxygen concentration at the interface area between the TE metal and TiO 2. This suggests that the oxidation reaction at the interface between the TE metal and TiO2 might cause the TE/TiO2/Pt structure to exhibit unstable resistive switching characteristics. According to these results, the oxidation reaction at the interface between the metal TE and TiO2 thin film is a primary factor affecting the resistive switching characteristics of TiO2-based Resistive Random Access Memory devices.",

author = "Oh, {Sang Chul} and Jung, {Ho Yong} and Heon Lee",

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AU - Jung, Ho Yong

AU - Lee, Heon

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N2 - Various metals, such as Pt, stainless steel (SUS), Al, Ni, and Ti, were used as a top electrode (TE) to evaluate the dependency of the resistive switching characteristics on the TE of the metal/TiO2/Pt structure. The variation of the chemical composition of TiO2 in the metal/TiO2/Pt structure before and after switching was examined to identify the factors affecting the resistive switching characteristics of the samples with various TE materials. In the case of TE/TiO2/Pt structures showing unstable resistive switching behavior, e.g., those with the Al, Ni, and Ti TEs, secondary ion mass spectrometry revealed an increase in the oxygen concentration at the interface area between the TE metal and TiO 2. This suggests that the oxidation reaction at the interface between the TE metal and TiO2 might cause the TE/TiO2/Pt structure to exhibit unstable resistive switching characteristics. According to these results, the oxidation reaction at the interface between the metal TE and TiO2 thin film is a primary factor affecting the resistive switching characteristics of TiO2-based Resistive Random Access Memory devices.

AB - Various metals, such as Pt, stainless steel (SUS), Al, Ni, and Ti, were used as a top electrode (TE) to evaluate the dependency of the resistive switching characteristics on the TE of the metal/TiO2/Pt structure. The variation of the chemical composition of TiO2 in the metal/TiO2/Pt structure before and after switching was examined to identify the factors affecting the resistive switching characteristics of the samples with various TE materials. In the case of TE/TiO2/Pt structures showing unstable resistive switching behavior, e.g., those with the Al, Ni, and Ti TEs, secondary ion mass spectrometry revealed an increase in the oxygen concentration at the interface area between the TE metal and TiO 2. This suggests that the oxidation reaction at the interface between the TE metal and TiO2 might cause the TE/TiO2/Pt structure to exhibit unstable resistive switching characteristics. According to these results, the oxidation reaction at the interface between the metal TE and TiO2 thin film is a primary factor affecting the resistive switching characteristics of TiO2-based Resistive Random Access Memory devices.

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