TY - JOUR
T1 - Effect of the top electrode materials on the resistive switching characteristics of TiO2 thin film
AU - Oh, Sang Chul
AU - Jung, Ho Yong
AU - Lee, Heon
N1 - Funding Information:
This work was financially supported through the Hynix-Korea University Nano-Semiconductor Program.
PY - 2011/6/15
Y1 - 2011/6/15
N2 - Various metals, such as Pt, stainless steel (SUS), Al, Ni, and Ti, were used as a top electrode (TE) to evaluate the dependency of the resistive switching characteristics on the TE of the metal/TiO2/Pt structure. The variation of the chemical composition of TiO2 in the metal/TiO2/Pt structure before and after switching was examined to identify the factors affecting the resistive switching characteristics of the samples with various TE materials. In the case of TE/TiO2/Pt structures showing unstable resistive switching behavior, e.g., those with the Al, Ni, and Ti TEs, secondary ion mass spectrometry revealed an increase in the oxygen concentration at the interface area between the TE metal and TiO 2. This suggests that the oxidation reaction at the interface between the TE metal and TiO2 might cause the TE/TiO2/Pt structure to exhibit unstable resistive switching characteristics. According to these results, the oxidation reaction at the interface between the metal TE and TiO2 thin film is a primary factor affecting the resistive switching characteristics of TiO2-based Resistive Random Access Memory devices.
AB - Various metals, such as Pt, stainless steel (SUS), Al, Ni, and Ti, were used as a top electrode (TE) to evaluate the dependency of the resistive switching characteristics on the TE of the metal/TiO2/Pt structure. The variation of the chemical composition of TiO2 in the metal/TiO2/Pt structure before and after switching was examined to identify the factors affecting the resistive switching characteristics of the samples with various TE materials. In the case of TE/TiO2/Pt structures showing unstable resistive switching behavior, e.g., those with the Al, Ni, and Ti TEs, secondary ion mass spectrometry revealed an increase in the oxygen concentration at the interface area between the TE metal and TiO 2. This suggests that the oxidation reaction at the interface between the TE metal and TiO2 might cause the TE/TiO2/Pt structure to exhibit unstable resistive switching characteristics. According to these results, the oxidation reaction at the interface between the metal TE and TiO2 thin film is a primary factor affecting the resistive switching characteristics of TiO2-based Resistive Random Access Memory devices.
UR - http://www.scopus.com/inward/record.url?scp=79960182423&partnerID=8YFLogxK
U2 - 10.1063/1.3596576
DO - 10.1063/1.3596576
M3 - Article
AN - SCOPUS:79960182423
SN - 0021-8979
VL - 109
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 12
M1 - 124511
ER -