Effect of thermal annealing of lead oxide film

Ohhyeon Hwang, Sangsu Kim, Jonghee Suh, Shinhang Cho, Kihyun Kim, Jinki Hong, Sunung Kim

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Oxygen partial pressure in a growth process of lead oxide determines chemical and physical properties as well as crystalline structure. In order to supply oxygen, two ring-shape suppliers have been installed in a growth chamber. Films have been deposited using vacuum thermal evaporation from a raw material of yellow lead oxide powder (5N). Growth rate is controlled to be about 400 /s, and film thickness more than 50 μm has been achieved. After deposition, the film is annealed at various temperatures under an oxygen atmosphere. In this study, an optimum growth condition for a good X-ray detector has been achieved by fine control of oxygen flow-rate and by thermal treatment. An electrical resistivity of 4.5×1012 Ω cm is measured, and is comparable with the best data of PbO.

Original languageEnglish
Pages (from-to)S69-S71
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue numberSUPPL. 1
Publication statusPublished - 2011 May
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of MKE/KEIT ( 2009-F-018-01 , TFT backplane technology for next generation display).

Copyright 2011 Elsevier B.V., All rights reserved.


  • Direct conversion
  • Lead oxide
  • PbO
  • X-ray detector

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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