Abstract
We investigated the effect of intense-pulsed light (IPL) post-treatment on the time-dependent characteristics of ZnO nanoparticles (NPs) used as an electron transport layer (ETL) of quantum-dot light-emitting diodes (QLEDs). The time-dependent characteristics of the charge injection balance in QLEDs was observed by fabrication and analysis of single carrier devices (SCDs), and it was confirmed that the time-dependent characteristics of the ZnO NPs affect the device characteristics of QLEDs. Stabilization of the ZnO NPs film properties for improvement of the charge injection balance in QLEDs was achieved by controlling the current density characteristics via filling of the oxygen vacancies by IPL post-treatment.
| Original language | English |
|---|---|
| Article number | 5041 |
| Pages (from-to) | 1-11 |
| Number of pages | 11 |
| Journal | Materials |
| Volume | 13 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 2020 Nov |
Bibliographical note
Funding Information:Funding: This study was conducted with support from the Korea Institute of Industrial Technology as R&D program (KITECH, UI200007), and by the Industry technology R&D program (20010510) funded by the Ministry of Trade, Industry & Energy (MOTIE, South Korea).
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Keywords
- Intense-pulsed light (IPL)
- Quantum-dot (QD)
- Quantum-dot light-emitting diodes (QLEDs)
- Zinc-oxide nanoparticles (ZnO NPs)
ASJC Scopus subject areas
- General Materials Science