Effect of total gas velocity on the growth of ZnO films by metal-organic chemical vapor deposition

Junjie Zhu, Ran Yao, Cihui Liu, In Hwan Lee, Lala Zhu, Jin woo Ju, Jong Hyeob Baek, Bixia Lin, Zhuxi Fu

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


ZnO films were grown on Si (100) substrates at low pressure in a vertical metal-organic chemical vapor deposition reactor with different total gas velocity. The structure and photoluminescence property of the undoped ZnO films grown with different flow rates of N2 eluting gas were investigated. The structure quality was improved as the N2 flow rate increased. In addition, when the flow rate of N2 eluting gas was higher than 1.4 slm, a new luminescence peak which was attributed to the N-related defect was detected at room temperature, besides the other two peaks near the band gap, which were due to radiation of the free exciton and the electron from the donor level to the valence band respectively, also appeared at low flow rate of N2 eluting gas.

Original languageEnglish
Pages (from-to)306-309
Number of pages4
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2006 Aug 30
Externally publishedYes


  • Chemical vapor deposition (CVD)
  • Photon emission
  • Structural properties
  • X-ray diffraction
  • Zinc Oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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