Effect of total gas velocity on the growth of ZnO films by metal-organic chemical vapor deposition

Junjie Zhu; Ran Yao; Cihui Liu; In Hwan Lee; Lala Zhu; Jin woo Ju; Jong Hyeob Baek; Bixia Lin; Zhuxi Fu

doi:10.1016/j.tsf.2006.02.094

Effect of total gas velocity on the growth of ZnO films by metal-organic chemical vapor deposition

Junjie Zhu, Ran Yao, Cihui Liu, In Hwan Lee, Lala Zhu, Jin woo Ju, Jong Hyeob Baek, Bixia Lin, Zhuxi Fu

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

ZnO films were grown on Si (100) substrates at low pressure in a vertical metal-organic chemical vapor deposition reactor with different total gas velocity. The structure and photoluminescence property of the undoped ZnO films grown with different flow rates of N₂ eluting gas were investigated. The structure quality was improved as the N₂ flow rate increased. In addition, when the flow rate of N₂ eluting gas was higher than 1.4 slm, a new luminescence peak which was attributed to the N-related defect was detected at room temperature, besides the other two peaks near the band gap, which were due to radiation of the free exciton and the electron from the donor level to the valence band respectively, also appeared at low flow rate of N₂ eluting gas.

Original language	English
Pages (from-to)	306-309
Number of pages	4
Journal	Thin Solid Films
Volume	514
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2006.02.094
Publication status	Published - 2006 Aug 30
Externally published	Yes

Keywords

Chemical vapor deposition (CVD)
Photon emission
Structural properties
X-ray diffraction
Zinc Oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2006.02.094

Cite this

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title = "Effect of total gas velocity on the growth of ZnO films by metal-organic chemical vapor deposition",

abstract = "ZnO films were grown on Si (100) substrates at low pressure in a vertical metal-organic chemical vapor deposition reactor with different total gas velocity. The structure and photoluminescence property of the undoped ZnO films grown with different flow rates of N2 eluting gas were investigated. The structure quality was improved as the N2 flow rate increased. In addition, when the flow rate of N2 eluting gas was higher than 1.4 slm, a new luminescence peak which was attributed to the N-related defect was detected at room temperature, besides the other two peaks near the band gap, which were due to radiation of the free exciton and the electron from the donor level to the valence band respectively, also appeared at low flow rate of N2 eluting gas.",

keywords = "Chemical vapor deposition (CVD), Photon emission, Structural properties, X-ray diffraction, Zinc Oxide",

author = "Junjie Zhu and Ran Yao and Cihui Liu and Lee, {In Hwan} and Lala Zhu and Ju, {Jin woo} and Baek, {Jong Hyeob} and Bixia Lin and Zhuxi Fu",

year = "2006",

month = aug,

day = "30",

doi = "10.1016/j.tsf.2006.02.094",

language = "English",

volume = "514",

pages = "306--309",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Effect of total gas velocity on the growth of ZnO films by metal-organic chemical vapor deposition

AU - Zhu, Junjie

AU - Yao, Ran

AU - Liu, Cihui

AU - Lee, In Hwan

AU - Zhu, Lala

AU - Ju, Jin woo

AU - Baek, Jong Hyeob

AU - Lin, Bixia

AU - Fu, Zhuxi

PY - 2006/8/30

Y1 - 2006/8/30

N2 - ZnO films were grown on Si (100) substrates at low pressure in a vertical metal-organic chemical vapor deposition reactor with different total gas velocity. The structure and photoluminescence property of the undoped ZnO films grown with different flow rates of N2 eluting gas were investigated. The structure quality was improved as the N2 flow rate increased. In addition, when the flow rate of N2 eluting gas was higher than 1.4 slm, a new luminescence peak which was attributed to the N-related defect was detected at room temperature, besides the other two peaks near the band gap, which were due to radiation of the free exciton and the electron from the donor level to the valence band respectively, also appeared at low flow rate of N2 eluting gas.

AB - ZnO films were grown on Si (100) substrates at low pressure in a vertical metal-organic chemical vapor deposition reactor with different total gas velocity. The structure and photoluminescence property of the undoped ZnO films grown with different flow rates of N2 eluting gas were investigated. The structure quality was improved as the N2 flow rate increased. In addition, when the flow rate of N2 eluting gas was higher than 1.4 slm, a new luminescence peak which was attributed to the N-related defect was detected at room temperature, besides the other two peaks near the band gap, which were due to radiation of the free exciton and the electron from the donor level to the valence band respectively, also appeared at low flow rate of N2 eluting gas.

KW - Chemical vapor deposition (CVD)

KW - Photon emission

KW - Structural properties

KW - X-ray diffraction

KW - Zinc Oxide

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U2 - 10.1016/j.tsf.2006.02.094

DO - 10.1016/j.tsf.2006.02.094

M3 - Article

AN - SCOPUS:33745739725

SN - 0040-6090

VL - 514

SP - 306

EP - 309

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Effect of total gas velocity on the growth of ZnO films by metal-organic chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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