Effect of Tunable Sub-Source and Sub-Drain Device Behavior in Four-Terminal Operation Using Metal-Capping Thin-Film Transistors

Ji Ye Lee, Byeong Kwon Ju, Sang Yeol Lee

Research output: Contribution to journalArticlepeer-review

Abstract

We report on a metal-capping (MC) structure with threshold voltage (Vth) tunability via four-terminal driving. Amorphous oxide semiconductors (AOSs) are emerging as promising next-generation semiconductor materials due to their remarkable properties, such as high field-effect mobility, uniformity, and excellent transmittance in the visible light region. The MC structure is a simple structure that can improve the characteristics of a thin-film transistor (TFTs) based on AOSs. By applying additional voltage to this MC layer, we were able to control the amount and direction of carrier flow during the I-V operation. With the four-terminal drive, the Vth of the MC TFT can be modulated according to the voltage applied to the MC layer. When a negative voltage is applied to the MC layer, the Vth shifts to the negative region, and when a positive voltage is applied, the Vth shifts to the positive region. With the four-terminal MC TFT, we expect to be able to compensate for Vth modulated by external stresses that significantly affect the display pixels. Furthermore, it is expected that this operating principle can be utilized in many application systems, such as sensors.

Original languageEnglish
Pages (from-to)6189-6196
Number of pages8
JournalACS Applied Electronic Materials
Volume5
Issue number11
DOIs
Publication statusPublished - 2023 Nov 28

Bibliographical note

Publisher Copyright:
© 2023 American Chemical Society.

Keywords

  • a-SiZnSnO
  • amorphous oxide semiconductors
  • metal capping layer
  • sub-source
  • thin-film transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrochemistry

Fingerprint

Dive into the research topics of 'Effect of Tunable Sub-Source and Sub-Drain Device Behavior in Four-Terminal Operation Using Metal-Capping Thin-Film Transistors'. Together they form a unique fingerprint.

Cite this