Effect of Underlying Bi2Se3 Surface on Magnetic Properties of Ni Films

Alviu Rey Nasir; Taehee Yoo; Seul Ki Bac; Hakjoon Lee; Sangyeop Lee; Seonghoon Choi; Sanghoon Lee; Xinyu Liu; M. Dobrowolska; Jacek K. Furdyna

doi:10.1109/TMAG.2017.2729500

Effect of Underlying Bi₂Se₃ Surface on Magnetic Properties of Ni Films

Alviu Rey Nasir
, Taehee Yoo
, Seul Ki Bac
, Hakjoon Lee
, Sangyeop Lee
, Seonghoon Choi
, Sanghoon Lee^*
, Xinyu Liu
, M. Dobrowolska
, Jacek K. Furdyna

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated magnetic properties of Ni film specimens deposited either on GaAs or on Bi₂Se₃ surfaces. The magnetization saturation field along the out-of-plane direction observed in the Hall data was weaker for the Ni/Bi₂Se₃ sample than for the Ni/GaAs sample. On the other hand, planar Hall resistance measurements showed the larger in-plane coercive field for Ni/Bi₂Se₃ than for Ni/GaAs. These changes of magnetic hardness observed along the out-of-plane and in-plane directions in the Ni/Bi₂Se₃ specimen are consistent with effects arising from spin-orbit interaction at the surface of the Bi₂Se₃ topological insulator.

Original language	English
Article number	7987797
Journal	IEEE Transactions on Magnetics
Volume	53
Issue number	11
DOIs	https://doi.org/10.1109/TMAG.2017.2729500
Publication status	Published - 2017 Nov

Bibliographical note

Publisher Copyright:
© 1965-2012 IEEE.

Keywords

Ferromagnetic (FM) films
magnetic anisotropy
planar Hall effect (PHR)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TMAG.2017.2729500

Cite this

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title = "Effect of Underlying Bi2Se3 Surface on Magnetic Properties of Ni Films",

abstract = "We have investigated magnetic properties of Ni film specimens deposited either on GaAs or on Bi2Se3 surfaces. The magnetization saturation field along the out-of-plane direction observed in the Hall data was weaker for the Ni/Bi2Se3 sample than for the Ni/GaAs sample. On the other hand, planar Hall resistance measurements showed the larger in-plane coercive field for Ni/Bi2Se3 than for Ni/GaAs. These changes of magnetic hardness observed along the out-of-plane and in-plane directions in the Ni/Bi2Se3 specimen are consistent with effects arising from spin-orbit interaction at the surface of the Bi2Se3 topological insulator.",

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T1 - Effect of Underlying Bi2Se3 Surface on Magnetic Properties of Ni Films

AU - Nasir, Alviu Rey

AU - Yoo, Taehee

AU - Bac, Seul Ki

AU - Lee, Hakjoon

AU - Lee, Sangyeop

AU - Choi, Seonghoon

AU - Lee, Sanghoon

AU - Liu, Xinyu

AU - Dobrowolska, M.

AU - Furdyna, Jacek K.

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N2 - We have investigated magnetic properties of Ni film specimens deposited either on GaAs or on Bi2Se3 surfaces. The magnetization saturation field along the out-of-plane direction observed in the Hall data was weaker for the Ni/Bi2Se3 sample than for the Ni/GaAs sample. On the other hand, planar Hall resistance measurements showed the larger in-plane coercive field for Ni/Bi2Se3 than for Ni/GaAs. These changes of magnetic hardness observed along the out-of-plane and in-plane directions in the Ni/Bi2Se3 specimen are consistent with effects arising from spin-orbit interaction at the surface of the Bi2Se3 topological insulator.

AB - We have investigated magnetic properties of Ni film specimens deposited either on GaAs or on Bi2Se3 surfaces. The magnetization saturation field along the out-of-plane direction observed in the Hall data was weaker for the Ni/Bi2Se3 sample than for the Ni/GaAs sample. On the other hand, planar Hall resistance measurements showed the larger in-plane coercive field for Ni/Bi2Se3 than for Ni/GaAs. These changes of magnetic hardness observed along the out-of-plane and in-plane directions in the Ni/Bi2Se3 specimen are consistent with effects arising from spin-orbit interaction at the surface of the Bi2Se3 topological insulator.

KW - Ferromagnetic (FM) films

KW - magnetic anisotropy

KW - planar Hall effect (PHR)

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