Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si

Hyun Yong Yu, Donghyun Kim, Shen Ren, Masaharu Kobayashi, David A.B. Miller, Yoshio Nishi, Krishna C. Saraswat

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


We demonstrate the effect of uniaxial tensile and compressive strain in Ge p-i-n photodiode integrated on Si using four-point bending structures. Responsivity at 1550 nm is increased from 0.67 to 0.75 A/W by tensile strain in the 〈 110 〉 direction while for compressive strain it decreases from 0.67 to 0.477 A/W. These uniaxial tensile and compressive strains also effectively result in shifts of the absorption spectra toward longer and shorter wavelength as they reduce or increase the direct bandgap energy of the Ge layer, respectively.

Original languageEnglish
Article number161106
JournalApplied Physics Letters
Issue number16
Publication statusPublished - 2009
Externally publishedYes

Bibliographical note

Funding Information:
This work was performed at the Stanford Nanofabrication Facility (SNF) and was supported by the FCRP Interconnect Focus Center and the Stanford University INMP program

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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