We demonstrate the effect of uniaxial tensile and compressive strain in Ge p-i-n photodiode integrated on Si using four-point bending structures. Responsivity at 1550 nm is increased from 0.67 to 0.75 A/W by tensile strain in the 〈 110 〉 direction while for compressive strain it decreases from 0.67 to 0.477 A/W. These uniaxial tensile and compressive strains also effectively result in shifts of the absorption spectra toward longer and shorter wavelength as they reduce or increase the direct bandgap energy of the Ge layer, respectively.
Bibliographical noteFunding Information:
This work was performed at the Stanford Nanofabrication Facility (SNF) and was supported by the FCRP Interconnect Focus Center and the Stanford University INMP program
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)