Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si

Hyun Yong Yu; Donghyun Kim; Shen Ren; Masaharu Kobayashi; David A.B. Miller; Yoshio Nishi; Krishna C. Saraswat

doi:10.1063/1.3254181

Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si

Hyun Yong Yu, Donghyun Kim, Shen Ren, Masaharu Kobayashi, David A.B. Miller, Yoshio Nishi, Krishna C. Saraswat

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We demonstrate the effect of uniaxial tensile and compressive strain in Ge p-i-n photodiode integrated on Si using four-point bending structures. Responsivity at 1550 nm is increased from 0.67 to 0.75 A/W by tensile strain in the 〈 110 〉 direction while for compressive strain it decreases from 0.67 to 0.477 A/W. These uniaxial tensile and compressive strains also effectively result in shifts of the absorption spectra toward longer and shorter wavelength as they reduce or increase the direct bandgap energy of the Ge layer, respectively.

Original language	English
Article number	161106
Journal	Applied Physics Letters
Volume	95
Issue number	16
DOIs	https://doi.org/10.1063/1.3254181
Publication status	Published - 2009
Externally published	Yes

Bibliographical note

Funding Information:
This work was performed at the Stanford Nanofabrication Facility (SNF) and was supported by the FCRP Interconnect Focus Center and the Stanford University INMP program

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3254181

Cite this

@article{87ca3e2820db4cd58ba1274cc48c6034,

title = "Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si",

abstract = "We demonstrate the effect of uniaxial tensile and compressive strain in Ge p-i-n photodiode integrated on Si using four-point bending structures. Responsivity at 1550 nm is increased from 0.67 to 0.75 A/W by tensile strain in the 〈 110 〉 direction while for compressive strain it decreases from 0.67 to 0.477 A/W. These uniaxial tensile and compressive strains also effectively result in shifts of the absorption spectra toward longer and shorter wavelength as they reduce or increase the direct bandgap energy of the Ge layer, respectively.",

author = "Yu, {Hyun Yong} and Donghyun Kim and Shen Ren and Masaharu Kobayashi and Miller, {David A.B.} and Yoshio Nishi and Saraswat, {Krishna C.}",

note = "Funding Information: This work was performed at the Stanford Nanofabrication Facility (SNF) and was supported by the FCRP Interconnect Focus Center and the Stanford University INMP program",

year = "2009",

doi = "10.1063/1.3254181",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "16",

}

TY - JOUR

T1 - Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si

AU - Yu, Hyun Yong

AU - Kim, Donghyun

AU - Ren, Shen

AU - Kobayashi, Masaharu

AU - Miller, David A.B.

AU - Nishi, Yoshio

AU - Saraswat, Krishna C.

N1 - Funding Information: This work was performed at the Stanford Nanofabrication Facility (SNF) and was supported by the FCRP Interconnect Focus Center and the Stanford University INMP program

PY - 2009

Y1 - 2009

N2 - We demonstrate the effect of uniaxial tensile and compressive strain in Ge p-i-n photodiode integrated on Si using four-point bending structures. Responsivity at 1550 nm is increased from 0.67 to 0.75 A/W by tensile strain in the 〈 110 〉 direction while for compressive strain it decreases from 0.67 to 0.477 A/W. These uniaxial tensile and compressive strains also effectively result in shifts of the absorption spectra toward longer and shorter wavelength as they reduce or increase the direct bandgap energy of the Ge layer, respectively.

AB - We demonstrate the effect of uniaxial tensile and compressive strain in Ge p-i-n photodiode integrated on Si using four-point bending structures. Responsivity at 1550 nm is increased from 0.67 to 0.75 A/W by tensile strain in the 〈 110 〉 direction while for compressive strain it decreases from 0.67 to 0.477 A/W. These uniaxial tensile and compressive strains also effectively result in shifts of the absorption spectra toward longer and shorter wavelength as they reduce or increase the direct bandgap energy of the Ge layer, respectively.

UR - http://www.scopus.com/inward/record.url?scp=70350424058&partnerID=8YFLogxK

U2 - 10.1063/1.3254181

DO - 10.1063/1.3254181

M3 - Article

AN - SCOPUS:70350424058

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 161106

ER -

Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this