Effect of Zn/Si ratio on the microstructural and microwave dielectric properties of Zn2SiO4 ceramics

Ngoc Huan Nguyen; Jong Bong Lim; Sahn Nahm; Jong Hoo Paik; Jong Hee Kim

doi:10.1111/j.1551-2916.2007.01891.x

Effect of Zn/Si ratio on the microstructural and microwave dielectric properties of Zn₂SiO₄ ceramics

Ngoc Huan Nguyen, Jong Bong Lim, Sahn Nahm, Jong Hoo Paik, Jong Hee Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

100 Citations (Scopus)

Abstract

Zn₂SiO₄ ceramics synthesized by the conventional solid-state method exhibited a low Q × f value, possibly due to the formation of a ZnO second phase. However, with a small ZnO reduction from the Zn₂SiO₄ ceramics, the ZnO second phase disappeared and grain growth occurred due to the formation of a Si-rich liquid phase. Specimens with a large grain size exhibited an improved Q × f value. In particular, the ceramics with nominal composition Zn_1.8SiO_3.8 sintered at 1300°C exhibited improved microwave dielectric properties of ε_r=6.6, Q × f=147 000 GHz, and τ_f=-22 ppm/°C.

Original language	English
Pages (from-to)	3127-3130
Number of pages	4
Journal	Journal of the American Ceramic Society
Volume	90
Issue number	10
DOIs	https://doi.org/10.1111/j.1551-2916.2007.01891.x
Publication status	Published - 2007 Oct

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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title = "Effect of Zn/Si ratio on the microstructural and microwave dielectric properties of Zn2SiO4 ceramics",

abstract = "Zn2SiO4 ceramics synthesized by the conventional solid-state method exhibited a low Q × f value, possibly due to the formation of a ZnO second phase. However, with a small ZnO reduction from the Zn2SiO4 ceramics, the ZnO second phase disappeared and grain growth occurred due to the formation of a Si-rich liquid phase. Specimens with a large grain size exhibited an improved Q × f value. In particular, the ceramics with nominal composition Zn1.8SiO3.8 sintered at 1300°C exhibited improved microwave dielectric properties of εr=6.6, Q × f=147 000 GHz, and τf=-22 ppm/°C.",

author = "Nguyen, {Ngoc Huan} and Lim, {Jong Bong} and Sahn Nahm and Paik, {Jong Hoo} and Kim, {Jong Hee}",

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T1 - Effect of Zn/Si ratio on the microstructural and microwave dielectric properties of Zn2SiO4 ceramics

AU - Nguyen, Ngoc Huan

AU - Lim, Jong Bong

AU - Nahm, Sahn

AU - Paik, Jong Hoo

AU - Kim, Jong Hee

PY - 2007/10

Y1 - 2007/10

N2 - Zn2SiO4 ceramics synthesized by the conventional solid-state method exhibited a low Q × f value, possibly due to the formation of a ZnO second phase. However, with a small ZnO reduction from the Zn2SiO4 ceramics, the ZnO second phase disappeared and grain growth occurred due to the formation of a Si-rich liquid phase. Specimens with a large grain size exhibited an improved Q × f value. In particular, the ceramics with nominal composition Zn1.8SiO3.8 sintered at 1300°C exhibited improved microwave dielectric properties of εr=6.6, Q × f=147 000 GHz, and τf=-22 ppm/°C.

AB - Zn2SiO4 ceramics synthesized by the conventional solid-state method exhibited a low Q × f value, possibly due to the formation of a ZnO second phase. However, with a small ZnO reduction from the Zn2SiO4 ceramics, the ZnO second phase disappeared and grain growth occurred due to the formation of a Si-rich liquid phase. Specimens with a large grain size exhibited an improved Q × f value. In particular, the ceramics with nominal composition Zn1.8SiO3.8 sintered at 1300°C exhibited improved microwave dielectric properties of εr=6.6, Q × f=147 000 GHz, and τf=-22 ppm/°C.

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Effect of Zn/Si ratio on the microstructural and microwave dielectric properties of Zn₂SiO₄ ceramics

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