Effect of Zr concentration on the microstructure of Al and the magnetoresistance properties of the magnetic tunnel junction with a Zr-alloyed Al-oxide barrier

Seong Rae Lee; Chul Min Choi; Young Keun Kim

doi:10.1063/1.1592312

Effect of Zr concentration on the microstructure of Al and the magnetoresistance properties of the magnetic tunnel junction with a Zr-alloyed Al-oxide barrier

Seong Rae Lee, Chul Min Choi, Young Keun Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

A Zr-alloyed Al-oxide barrier was used to study the composition dependence of the microstructure of Al-Zr alloy films and the tunneling magnetoresistance (TMR) behavior of magnetic tunnel junctions (MTJ). The microstructure of the Al-Zr alloy before oxidation was found to have a dominant effect on the TMR characteristics and MTJ stability. A single amorphous Al-Zr alloy has superior surface uniformity.

Original language	English
Pages (from-to)	317-319
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	2
DOIs	https://doi.org/10.1063/1.1592312
Publication status	Published - 2003 Jul 14

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1592312

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AB - A Zr-alloyed Al-oxide barrier was used to study the composition dependence of the microstructure of Al-Zr alloy films and the tunneling magnetoresistance (TMR) behavior of magnetic tunnel junctions (MTJ). The microstructure of the Al-Zr alloy before oxidation was found to have a dominant effect on the TMR characteristics and MTJ stability. A single amorphous Al-Zr alloy has superior surface uniformity.

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Effect of Zr concentration on the microstructure of Al and the magnetoresistance properties of the magnetic tunnel junction with a Zr-alloyed Al-oxide barrier

Abstract

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