Effective electrochemical gating of hole transport in aligned single-walled carbon nanotube network thin film transistors

We have investigated the electrochemical gating characteristics of hole transport in aligned single-walled carbon nanotube (SWCNT) network thin film transistors (TFT). SWCNT thin films were aligned between source and drain electrodes by using dielectrophoresis. An electric field applied between 1 mM NaCl solution and the SWCNT actively controlled the hole transport in a p-type TFT. This may be due to the applied electric field polarizing the ions creating an electrical double layer on the SWCNT surface, which actively raises or lowers the p-type thin film's Fermi level. Compared to the transfer characteristics obtained using the substrate as a backgate. electrochemical gating when shows much enhanced capacitive coupling between the gate and the SWCNT and much increased transconductance characteristics.