Abstract
We have investigated the electrochemical gating characteristics of hole transport in aligned single-walled carbon nanotube (SWCNT) network thin film transistors (TFT). SWCNT thin films were aligned between source and drain electrodes by using dielectrophoresis. An electric field applied between 1 mM NaCl solution and the SWCNT actively controlled the hole transport in a p-type TFT. This may be due to the applied electric field polarizing the ions creating an electrical double layer on the SWCNT surface, which actively raises or lowers the p-type thin film's Fermi level. Compared to the transfer characteristics obtained using the substrate as a backgate. electrochemical gating when shows much enhanced capacitive coupling between the gate and the SWCNT and much increased transconductance characteristics.
Original language | English |
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Pages (from-to) | S828-S832 |
Journal | Journal of the Korean Physical Society |
Volume | 49 |
Issue number | SUPPL. 3 |
Publication status | Published - 2006 Dec |
Keywords
- Carbon nanotube
- Electrochemical gating
- Field-effect transistor
- Network transport
ASJC Scopus subject areas
- General Physics and Astronomy