Effective light absorptive layer-using mezo-porous silicon by electrochemical etching

Jae Hong Kwon, Soo Hong Lee, Byeong Kwon Ju

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    Porous silicon (PS), an excellent light diffuser, can be used as an antireflective layer that does not need to be coated with other antireflection coating (ARC) materials. PS layers were obtained by electrochemical etching (ECE) anodization of silicon wafers in hydrofluoric acid/ethanol/deionized (DI) water solution (HF/EtOH/H2O). This technique selectively removes Si atoms from the sample surface, forming a PS layer with adjustable optical, electrical, and mechanical properties. A PS layer with optimal antireflection characteristics was obtained for a charge density (Q) of 5.2C/cm2. The weighted reflectance was reduced from 24 to 4% in the wavelength range from 400 to 1000nm. The weighted reflectance with optimized PS layers is much less than that with a commercial SiNx ARC on a potassium hydroxide (KOH) pretextured multicrystalline silicon (mc-Si) surface. Therefore, it can be successfully used as an alternative way for the preparation of a PS antireflective layer for a silicon solar cell.

    Original languageEnglish
    Pages (from-to)2875-2880
    Number of pages6
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume45
    Issue number4 A
    DOIs
    Publication statusPublished - 2006 Apr 7

    Keywords

    • Antireflective layer
    • Electrochemical etching
    • Porous silicon
    • Solar cell

    ASJC Scopus subject areas

    • General Engineering
    • General Physics and Astronomy

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