Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique

Jihyun Kim; J. A. Freitas; J. Mittereder; R. Fitch; B. S. Kang; S. J. Pearton; F. Ren

doi:10.1016/j.sse.2005.11.009

Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique

Jihyun Kim, J. A. Freitas, J. Mittereder, R. Fitch, B. S. Kang, S. J. Pearton, F. Ren

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

We report on contact-free measurement of channel temperature of AlGaN/GaN HEMTs under different operation modes. Micro-Raman spectroscopy was successfully used to measure the temperature of operating HEMT devices with <1 μm spatial resolution. Channel temperatures at various load lines were compared. The effective operating temperatures of AlGaN/GaN HEMTs were accessed from the calibration curve of passively heated AlGaN/GaN structures. A linear increase of junction temperature was observed when DC dissipated power was increased. The temperature of the center of the channel in the HEMT was higher than that near the edge by ∼30 °C at 800 mW DC power. The temperature range of class A operation mode is higher than that of class B operation mode. The operating device reached temperatures as high as 115 °C at 800 mW DC input power.

Original language	English
Pages (from-to)	408-411
Number of pages	4
Journal	Solid-State Electronics
Volume	50
Issue number	3
DOIs	https://doi.org/10.1016/j.sse.2005.11.009
Publication status	Published - 2006 Mar

Bibliographical note

Funding Information:
This work was partially supported by the ONR contract N0001405WR20317 (Dr. C.E.C. Wood) and NRL contract N00173-05-1G001.

Keywords

GaN
HEMT
Raman
Reliability
Temperature

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2005.11.009

Cite this

@article{9b8cab4305764e74a5c49413d94df7dd,

title = "Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique",

abstract = "We report on contact-free measurement of channel temperature of AlGaN/GaN HEMTs under different operation modes. Micro-Raman spectroscopy was successfully used to measure the temperature of operating HEMT devices with <1 μm spatial resolution. Channel temperatures at various load lines were compared. The effective operating temperatures of AlGaN/GaN HEMTs were accessed from the calibration curve of passively heated AlGaN/GaN structures. A linear increase of junction temperature was observed when DC dissipated power was increased. The temperature of the center of the channel in the HEMT was higher than that near the edge by ∼30 °C at 800 mW DC power. The temperature range of class A operation mode is higher than that of class B operation mode. The operating device reached temperatures as high as 115 °C at 800 mW DC input power.",

keywords = "GaN, HEMT, Raman, Reliability, Temperature",

author = "Jihyun Kim and Freitas, {J. A.} and J. Mittereder and R. Fitch and Kang, {B. S.} and Pearton, {S. J.} and F. Ren",

note = "Funding Information: This work was partially supported by the ONR contract N0001405WR20317 (Dr. C.E.C. Wood) and NRL contract N00173-05-1G001.",

year = "2006",

month = mar,

doi = "10.1016/j.sse.2005.11.009",

language = "English",

volume = "50",

pages = "408--411",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "3",

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TY - JOUR

T1 - Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique

AU - Kim, Jihyun

AU - Freitas, J. A.

AU - Mittereder, J.

AU - Fitch, R.

AU - Kang, B. S.

AU - Pearton, S. J.

AU - Ren, F.

N1 - Funding Information: This work was partially supported by the ONR contract N0001405WR20317 (Dr. C.E.C. Wood) and NRL contract N00173-05-1G001.

PY - 2006/3

Y1 - 2006/3

N2 - We report on contact-free measurement of channel temperature of AlGaN/GaN HEMTs under different operation modes. Micro-Raman spectroscopy was successfully used to measure the temperature of operating HEMT devices with <1 μm spatial resolution. Channel temperatures at various load lines were compared. The effective operating temperatures of AlGaN/GaN HEMTs were accessed from the calibration curve of passively heated AlGaN/GaN structures. A linear increase of junction temperature was observed when DC dissipated power was increased. The temperature of the center of the channel in the HEMT was higher than that near the edge by ∼30 °C at 800 mW DC power. The temperature range of class A operation mode is higher than that of class B operation mode. The operating device reached temperatures as high as 115 °C at 800 mW DC input power.

AB - We report on contact-free measurement of channel temperature of AlGaN/GaN HEMTs under different operation modes. Micro-Raman spectroscopy was successfully used to measure the temperature of operating HEMT devices with <1 μm spatial resolution. Channel temperatures at various load lines were compared. The effective operating temperatures of AlGaN/GaN HEMTs were accessed from the calibration curve of passively heated AlGaN/GaN structures. A linear increase of junction temperature was observed when DC dissipated power was increased. The temperature of the center of the channel in the HEMT was higher than that near the edge by ∼30 °C at 800 mW DC power. The temperature range of class A operation mode is higher than that of class B operation mode. The operating device reached temperatures as high as 115 °C at 800 mW DC input power.

KW - GaN

KW - HEMT

KW - Raman

KW - Reliability

KW - Temperature

UR - http://www.scopus.com/inward/record.url?scp=33748643016&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2005.11.009

DO - 10.1016/j.sse.2005.11.009

M3 - Article

AN - SCOPUS:33748643016

SN - 0038-1101

VL - 50

SP - 408

EP - 411

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3

ER -

Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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