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Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique
Jihyun Kim
*
, J. A. Freitas
, J. Mittereder
, R. Fitch
, B. S. Kang
, S. J. Pearton
, F. Ren
*
Corresponding author for this work
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Article
›
peer-review
32
Citations (Scopus)
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Dive into the research topics of 'Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique'. Together they form a unique fingerprint.
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Keyphrases
Operation Mode
100%
AlGaN-GaN
100%
GaN HEMT
100%
Temperature Measurement
100%
Raman Technique
100%
Effective Temperature
100%
Line Load
100%
Micro-Raman
100%
Channel Temperature
66%
Spatial Resolution
33%
Input Power
33%
Temperature Range
33%
Micro-Raman Spectroscopy
33%
Junction Temperature
33%
Operating Temperature
33%
Calibration Curve
33%
Operating Device
33%
HEMT Devices
33%
Dissipated Power
33%
Contactless Measurement
33%
DC Power
33%
Engineering
Operation Mode
100%
Loadline
100%
Effective Temperature
100%
Spatial Resolution
33%
Input Power
33%
Temperature Range
33%
Junction Temperature
33%
Operating Temperature
33%
Calibration Curve
33%