Effective threshold voltage modulation technique for steep-slope 2D atomic threshold switching field-effect transistor

Seong Hyun Hwang, Seung Hwan Kim, Seung Geun Kim, Min Su Kim, Kyu Hyun Han, Sungjoo Song, Jong Hyun Kim, Euyjin Park, Dong Gyu Jin, Hyun Yong Yu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Two-dimensional (2D) atomic threshold switching field-effect transistors (ATS-FETs), which integrate 2D FET with threshold switching (TS) devices, have garnered attention as part of the subthreshold swing (SS) improvement for next-generation low-power devices. For industrial applications of 2D ATS-FET, it is important to secure the threshold voltage (Vth) modulation technique. Here, Vth engineering is performed by altering the counter electrode (CE) of a TS device, and the electrical performance of the ATS-FET is systematically investigated. The work function difference between the active electrode and CE alters the internal electric field (E-field) formed between these two electrodes. This severely affects the metal ion migration of the active electrode and induces the Vth shift of the ATS-FET. Because the proposed Vth adjusting technique does not affect the channel material, the MoS2 ATS-FET with the proposed technique can shift Vth while maintaining a high on–off ratio of >105 A on average and achieves an ultra-low average SS of ∼10.929 mV/dec. Moreover, the SS variation due to the random interface traps between the channel and gate dielectric is sufficiently suppressed. This study is expected to be a cornerstone for ATS-FET research by offering a compact platform to adjust Vth without deteriorating steep-slope characteristics.

Original languageEnglish
Article number100367
JournalMaterials Today Advances
Publication statusPublished - 2023 Jun

Bibliographical note

Funding Information:
This study was supported in part by the Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the National Research Foundation of Korea under Grant 2020R1A2C2004029 .

Publisher Copyright:
© 2023 The Authors


  • 2D channel
  • Atomic threshold switching field-effect transistors
  • High on–off current ratio
  • Low subthreshold swing
  • Threshold voltage modulation

ASJC Scopus subject areas

  • General Materials Science
  • Mechanical Engineering


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