Effects of 340keV proton irradiation on InGaN/GaN blue light-emitting diodes

Byung Jae Kim, Ya Hsi Hwang, Shihyun Ahn, Fan Ren, Stephen J. Pearton, Jihyun Kim, Tae Sung Jang

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14 Citations (Scopus)


The effects of proton irradiation on optical and electrical performances of InGaN/GaN blue light-emitting diodes (LEDs) were investigated. The InGaN/GaN blue LEDs were irradiated with protons at a fixed energy of 340keV and doses ranging from 5×1010 to 1×1014/cm2. Both current-voltage (I-V) and light output-current (L-I) characteristics of InGaN/GaN blue LEDs were gradually degraded as increasing the proton doses. The optical performances of LED were much more sensitive to the proton irradiation than that of electrical performances. The electroluminescence spectra and the light output performances before and after proton irradiations had similar trends in degradation. Then, the reverse recovery time before and after 1×1014/cm2 proton irradiation slightly decreased from 31.0 to 27.6ns.

Original languageEnglish
Article number051215
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Issue number5
Publication statusPublished - 2015 Sept 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Process Chemistry and Technology


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