Effects of 340keV proton irradiation on InGaN/GaN blue light-emitting diodes

Byung Jae Kim; Ya Hsi Hwang; Shihyun Ahn; Fan Ren; Stephen J. Pearton; Jihyun Kim; Tae Sung Jang

doi:10.1116/1.4930297

Effects of 340keV proton irradiation on InGaN/GaN blue light-emitting diodes

Byung Jae Kim, Ya Hsi Hwang, Shihyun Ahn, Fan Ren, Stephen J. Pearton, Jihyun Kim, Tae Sung Jang

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The effects of proton irradiation on optical and electrical performances of InGaN/GaN blue light-emitting diodes (LEDs) were investigated. The InGaN/GaN blue LEDs were irradiated with protons at a fixed energy of 340keV and doses ranging from 5×10¹⁰ to 1×10¹⁴/cm². Both current-voltage (I-V) and light output-current (L-I) characteristics of InGaN/GaN blue LEDs were gradually degraded as increasing the proton doses. The optical performances of LED were much more sensitive to the proton irradiation than that of electrical performances. The electroluminescence spectra and the light output performances before and after proton irradiations had similar trends in degradation. Then, the reverse recovery time before and after 1×10¹⁴/cm² proton irradiation slightly decreased from 31.0 to 27.6ns.

Original language	English
Article number	051215
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	33
Issue number	5
DOIs	https://doi.org/10.1116/1.4930297
Publication status	Published - 2015 Sept 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Materials Chemistry
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Process Chemistry and Technology

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title = "Effects of 340keV proton irradiation on InGaN/GaN blue light-emitting diodes",

abstract = "The effects of proton irradiation on optical and electrical performances of InGaN/GaN blue light-emitting diodes (LEDs) were investigated. The InGaN/GaN blue LEDs were irradiated with protons at a fixed energy of 340keV and doses ranging from 5×1010 to 1×1014/cm2. Both current-voltage (I-V) and light output-current (L-I) characteristics of InGaN/GaN blue LEDs were gradually degraded as increasing the proton doses. The optical performances of LED were much more sensitive to the proton irradiation than that of electrical performances. The electroluminescence spectra and the light output performances before and after proton irradiations had similar trends in degradation. Then, the reverse recovery time before and after 1×1014/cm2 proton irradiation slightly decreased from 31.0 to 27.6ns.",

author = "Kim, {Byung Jae} and Hwang, {Ya Hsi} and Shihyun Ahn and Fan Ren and Pearton, {Stephen J.} and Jihyun Kim and Jang, {Tae Sung}",

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T1 - Effects of 340keV proton irradiation on InGaN/GaN blue light-emitting diodes

AU - Kim, Byung Jae

AU - Hwang, Ya Hsi

AU - Ahn, Shihyun

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Kim, Jihyun

AU - Jang, Tae Sung

PY - 2015/9/1

Y1 - 2015/9/1

N2 - The effects of proton irradiation on optical and electrical performances of InGaN/GaN blue light-emitting diodes (LEDs) were investigated. The InGaN/GaN blue LEDs were irradiated with protons at a fixed energy of 340keV and doses ranging from 5×1010 to 1×1014/cm2. Both current-voltage (I-V) and light output-current (L-I) characteristics of InGaN/GaN blue LEDs were gradually degraded as increasing the proton doses. The optical performances of LED were much more sensitive to the proton irradiation than that of electrical performances. The electroluminescence spectra and the light output performances before and after proton irradiations had similar trends in degradation. Then, the reverse recovery time before and after 1×1014/cm2 proton irradiation slightly decreased from 31.0 to 27.6ns.

AB - The effects of proton irradiation on optical and electrical performances of InGaN/GaN blue light-emitting diodes (LEDs) were investigated. The InGaN/GaN blue LEDs were irradiated with protons at a fixed energy of 340keV and doses ranging from 5×1010 to 1×1014/cm2. Both current-voltage (I-V) and light output-current (L-I) characteristics of InGaN/GaN blue LEDs were gradually degraded as increasing the proton doses. The optical performances of LED were much more sensitive to the proton irradiation than that of electrical performances. The electroluminescence spectra and the light output performances before and after proton irradiations had similar trends in degradation. Then, the reverse recovery time before and after 1×1014/cm2 proton irradiation slightly decreased from 31.0 to 27.6ns.

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Effects of 340keV proton irradiation on InGaN/GaN blue light-emitting diodes

Abstract

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