Effects of a low-energy proton irradiation on n+/p-AlInGaP solar cells

H. S. Lee, M. Yamaguchi, N. J. Ekins-Daukes, A. Khan, T. Takamoto, M. Imaizumi, T. Ohshima, H. Itoh

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


For the first time, by deep-level transient spectroscopy, 30 keV proton irradiation-induced defects in n+/p-AlInGaP solar cells have been observed. After the 30 keV proton irradiation, new deep-level defects such as two majority-carrier (hole) traps HP1 (EV+0.98eV, NT=3.8×1014cm-3) and HP2, and two minority-carrier (electron) traps EP1 (EC-0.71eV, NT=2.0×1015cm-3) and EP2 have been observed in p-AlInGaP. The introduction rate of majority-carrier trap center (HP1) is 380 cm-1, which is lower than that (1500 cm-1) in 100 keV proton-irradiated p-InGaP. From the minority-carrier injection annealing for HP1 defect and carrier concentration in 30 keV proton-irradiated p-AlInGaP, HP1 defect is likely to act as a recombination center as well as a compensator center.

Original languageEnglish
Pages (from-to)564-567
Number of pages4
JournalPhysica B: Condensed Matter
Issue number1
Publication statusPublished - 2006 Apr 1
Externally publishedYes
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: 2005 Jul 242005 Jul 29

Bibliographical note

Funding Information:
This work was supported in part by the Ministry of Education Culture, Sports, Science and Technology as a Private University Academic Frontier Center Program in Japan.


  • Defect
  • Multijunction solar cell
  • Proton irradiation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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