Effects of a low-energy proton irradiation on n+/p-AlInGaP solar cells

H. S. Lee; M. Yamaguchi; N. J. Ekins-Daukes; A. Khan; T. Takamoto; M. Imaizumi; T. Ohshima; H. Itoh

doi:10.1016/j.physb.2005.12.142

Effects of a low-energy proton irradiation on n⁺/p-AlInGaP solar cells

H. S. Lee, M. Yamaguchi, N. J. Ekins-Daukes, A. Khan, T. Takamoto, M. Imaizumi, T. Ohshima, H. Itoh

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

For the first time, by deep-level transient spectroscopy, 30 keV proton irradiation-induced defects in n⁺/p-AlInGaP solar cells have been observed. After the 30 keV proton irradiation, new deep-level defects such as two majority-carrier (hole) traps HP1 (EV+0.98eV, NT=3.8×1014cm-3) and HP2, and two minority-carrier (electron) traps EP1 (EC-0.71eV, NT=2.0×1015cm-3) and EP2 have been observed in p-AlInGaP. The introduction rate of majority-carrier trap center (HP1) is 380 cm^-1, which is lower than that (1500 cm^-1) in 100 keV proton-irradiated p-InGaP. From the minority-carrier injection annealing for HP1 defect and carrier concentration in 30 keV proton-irradiated p-AlInGaP, HP1 defect is likely to act as a recombination center as well as a compensator center.

Original language	English
Pages (from-to)	564-567
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.142
Publication status	Published - 2006 Apr 1
Externally published	Yes
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 2005 Jul 24 → 2005 Jul 29

Bibliographical note

Funding Information:
This work was supported in part by the Ministry of Education Culture, Sports, Science and Technology as a Private University Academic Frontier Center Program in Japan.

Keywords

Defect
Multijunction solar cell
Proton irradiation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.physb.2005.12.142

Cite this

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title = "Effects of a low-energy proton irradiation on n+/p-AlInGaP solar cells",

abstract = "For the first time, by deep-level transient spectroscopy, 30 keV proton irradiation-induced defects in n+/p-AlInGaP solar cells have been observed. After the 30 keV proton irradiation, new deep-level defects such as two majority-carrier (hole) traps HP1 (EV+0.98eV, NT=3.8×1014cm-3) and HP2, and two minority-carrier (electron) traps EP1 (EC-0.71eV, NT=2.0×1015cm-3) and EP2 have been observed in p-AlInGaP. The introduction rate of majority-carrier trap center (HP1) is 380 cm-1, which is lower than that (1500 cm-1) in 100 keV proton-irradiated p-InGaP. From the minority-carrier injection annealing for HP1 defect and carrier concentration in 30 keV proton-irradiated p-AlInGaP, HP1 defect is likely to act as a recombination center as well as a compensator center.",

keywords = "Defect, Multijunction solar cell, Proton irradiation",

author = "Lee, {H. S.} and M. Yamaguchi and Ekins-Daukes, {N. J.} and A. Khan and T. Takamoto and M. Imaizumi and T. Ohshima and H. Itoh",

note = "Funding Information: This work was supported in part by the Ministry of Education Culture, Sports, Science and Technology as a Private University Academic Frontier Center Program in Japan.; Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

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T1 - Effects of a low-energy proton irradiation on n+/p-AlInGaP solar cells

AU - Lee, H. S.

AU - Yamaguchi, M.

AU - Ekins-Daukes, N. J.

AU - Khan, A.

AU - Takamoto, T.

AU - Imaizumi, M.

AU - Ohshima, T.

AU - Itoh, H.

N1 - Funding Information: This work was supported in part by the Ministry of Education Culture, Sports, Science and Technology as a Private University Academic Frontier Center Program in Japan.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - For the first time, by deep-level transient spectroscopy, 30 keV proton irradiation-induced defects in n+/p-AlInGaP solar cells have been observed. After the 30 keV proton irradiation, new deep-level defects such as two majority-carrier (hole) traps HP1 (EV+0.98eV, NT=3.8×1014cm-3) and HP2, and two minority-carrier (electron) traps EP1 (EC-0.71eV, NT=2.0×1015cm-3) and EP2 have been observed in p-AlInGaP. The introduction rate of majority-carrier trap center (HP1) is 380 cm-1, which is lower than that (1500 cm-1) in 100 keV proton-irradiated p-InGaP. From the minority-carrier injection annealing for HP1 defect and carrier concentration in 30 keV proton-irradiated p-AlInGaP, HP1 defect is likely to act as a recombination center as well as a compensator center.

AB - For the first time, by deep-level transient spectroscopy, 30 keV proton irradiation-induced defects in n+/p-AlInGaP solar cells have been observed. After the 30 keV proton irradiation, new deep-level defects such as two majority-carrier (hole) traps HP1 (EV+0.98eV, NT=3.8×1014cm-3) and HP2, and two minority-carrier (electron) traps EP1 (EC-0.71eV, NT=2.0×1015cm-3) and EP2 have been observed in p-AlInGaP. The introduction rate of majority-carrier trap center (HP1) is 380 cm-1, which is lower than that (1500 cm-1) in 100 keV proton-irradiated p-InGaP. From the minority-carrier injection annealing for HP1 defect and carrier concentration in 30 keV proton-irradiated p-AlInGaP, HP1 defect is likely to act as a recombination center as well as a compensator center.

KW - Defect

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KW - Proton irradiation

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