For the first time, by deep-level transient spectroscopy, 30 keV proton irradiation-induced defects in n+/p-AlInGaP solar cells have been observed. After the 30 keV proton irradiation, new deep-level defects such as two majority-carrier (hole) traps HP1 (EV+0.98eV, NT=3.8×1014cm-3) and HP2, and two minority-carrier (electron) traps EP1 (EC-0.71eV, NT=2.0×1015cm-3) and EP2 have been observed in p-AlInGaP. The introduction rate of majority-carrier trap center (HP1) is 380 cm-1, which is lower than that (1500 cm-1) in 100 keV proton-irradiated p-InGaP. From the minority-carrier injection annealing for HP1 defect and carrier concentration in 30 keV proton-irradiated p-AlInGaP, HP1 defect is likely to act as a recombination center as well as a compensator center.
|Number of pages||4|
|Journal||Physica B: Condensed Matter|
|Publication status||Published - 2006 Apr 1|
|Event||Proceedings of the 23rd International Conference on Defects in Semiconductors - |
Duration: 2005 Jul 24 → 2005 Jul 29
Bibliographical noteFunding Information:
This work was supported in part by the Ministry of Education Culture, Sports, Science and Technology as a Private University Academic Frontier Center Program in Japan.
- Multijunction solar cell
- Proton irradiation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering