Effects of a thin (In)GaAs layer on the structural and optical properties of InAsInAlGaAs quantum dots

Jin Soo Kim, Youngsin Yang, Cheul Ro Lee, In Hwan Lee, Yeon Tae Yu, Haeng Keun Ahn, Kyeong Won Seol, Jong Su Kim, Jae Young Leem, Mee Yi Ryu

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5 Citations (Scopus)

Abstract

The introduction of a thin (In)GaAs layer between an InAs quantum dot (QD) layer and an InAlGaAs layer altered the structural and optical properties of self-assembled InAsInAlGaAs QDs grown on InP (001) substrates. The emission peak of the InAs QDs on a thin In0.32 Ga0.68 As layer grown on InAlGaAs was redshifted with increasing thickness of the In0.32 Ga0.68 As layer. However, the photoluminescence (PL) peak of the InAs QDs on a thin GaAs layer grown on InAlGaAs was blueshifted with increasing thickness of the GaAs layer, and the PL yield was also drastically decreased. Although the lattice constants of both In0.32 Ga0.68 As and GaAs are smaller than that of InAlGaAs, which would be expected to have a similar type of strain modulation, the structural and optical properties of the InAs QDs were significantly different because of the different nucleation characteristics of QDs.

Original languageEnglish
Article number113526
JournalJournal of Applied Physics
Volume102
Issue number11
DOIs
Publication statusPublished - 2007
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported in part by research funds of Chonbuk National University in 2006 (NP-2006-105897001), in part by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2007-331-D00246), and in part by the research fund of the Small and Medium Business Administration (00025011).

ASJC Scopus subject areas

  • General Physics and Astronomy

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