Effects of Al2O3 Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface Properties

Kyul Ko, Dae Hwan Ahn, Hoyoung Suh, Byeong Kwon Ju, Jae Hoon Han

Research output: Contribution to journalArticlepeer-review

Abstract

A ferroelectric device with a III–V semiconductor is one of the promising candidates for high-performance and energy-efficient electronic and photonic applications. These applications require high remanent polarization and low interface trap density. Here, we examined the ferroelectric characteristic and MOS interface property for the InGaAs metal-ferroelectric-insulator-semiconductor (MFIS) ferroelectric capacitor with varying Al2O3 interfacial layer (IL) thickness and crystallization temperature. We found that the atomic layer deposition (ALD)-deposited HfO2/ZrO2 (HZO) nanolaminates are well crystallized with a (111)-oriented orthorhombic phase on InGaAs crystals at the low crystallization temperature of 400 C. By optimizing the IL thickness and crystallization temperature, the InGaAs MFIS ferroelectric capacitor achieves a high remanent polarization while maintaining a low interface trap density. Furthermore, the InGaAs MFIS ferroelectric capacitor also presents good retention over 104 s and endurance in 105–106 cycles at 10 kHz.

Original languageEnglish
Pages (from-to)6237-6243
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume70
Issue number12
DOIs
Publication statusPublished - 2023 Dec 1

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Keywords

  • Crystallization temperature
  • HZO
  • InGaAs
  • MOS interface
  • interfacial layer (IL)
  • metal-ferroelectric-insulator-semiconductor (MFIS)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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