Abstract
A magnetic device which enables the application of a strong and uniform magnetic field to thin film during sputtering was designed for controlling the magnetic anisotropy using a three dimensional finite element method, and the effects of the external magnetic field on the magnetic properties of sputtered thin films were investigated. Both the intensity and the uniformity of the magnetic flux density in the sputter zone (50 mm x 50 mm) was dependent on not only the shape and size of the magnet device but also the magnitude of stray fields from the magnet. For the magnet device in which the distance between two magnets or two pure iron bars was 80-90 mm, the magnetic flux density along the direction normal to the external magnetic field direction was minimum. The two row magnets increased the magnetic flux density and uniformity along the external magnetic field direction. An Fe thin film sputtered using the optimized magnet device showed a higher remanence ratio than that fabricated under no external magnetic field.
| Original language | English |
|---|---|
| Pages (from-to) | 505-513 |
| Number of pages | 9 |
| Journal | Journal of Korean Institute of Metals and Materials |
| Volume | 49 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2011 Jun |
Keywords
- Finite element method
- Magnetic anisotropy
- Magnetic field sputtering
- Magnetic thin film
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Modelling and Simulation
- Surfaces, Coatings and Films
- Metals and Alloys